Panasonic MA2J111 Datasheet

Switching Diodes

MA2J111

Silicon epitaxial planar type

For switching circuits

■ Features

•

Small S-mini type package, allowing high-density mounting

•

Short reverse recovery time t

•

Small terminal capacitance, C

•

High breakdown voltage (V

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage (DC) V

Peak reverse voltage V

Average forward current I

Peak forward current I

Non-repetitive peak forward I

surge current

Junction temperature T

Storage temperature T

Note) * :t = 1 s

*

rr

t

= 80 V)

R

F(AV)

FSM

R

RM

FM

j

−55 to +150 °C

stg

80 V

80 V

100 mA

225 mA

500 mA

150 °C

Unit : mm

KA

0.625

0.3

1

0.4 ± 0.1

1 : Anode
2 : Cathode

+ 0.1

0.1

±

0.5

− 0.06

0.16

0.4 ± 0.1

2

1.7 ± 0.1

2.5 ± 0.2

S-Mini Type Package (2-pin)

Marking Symbol: 1B

0.1

±

1.25

0.1

±

0.7

■ Electrical Characteristics Ta = 25°C

Parameter Symbol Conditions Min Typ Max Unit

Reverse current (DC) I

Forward voltage (DC) V

Reverse voltage (DC) V

Terminal capacitance C

Reverse recovery time

*

Note) 1. Rated input/output frequency: 100 MHz

2. * : trr measuring circuit

Bias Application Unit N-50BU

A

Pulse Generator
(PG-10N)

= 50 Ω

R

s

R

F

R

t

t

rr

W.F.Analyzer
(SAS-8130)

= 50 Ω

R

i

VR = 75 V 100 nA

IF = 100 mA 0.95 1.2 V

IR = 100 µA80V

VR = 0 V, f = 1 MHz 0.6 1.2 pF

IF = 10 mA, VR = 6 V 3 ns

Irr = 0.1 · IR, RL = 100 Ω

Input Pulse Output Pulse

t

t

p

r

10%

90%

V

R

= 2 µs

t

p

= 0.35 ns

t

r

δ = 0.05

t

I

F

= 10 mA

I

F

= 6 V

V

R

= 100 Ω

R

L

t

rr

Irr = 0.1 · I

t

R

1

MA2J111

Switching Diodes

IF  V

F

1 000

100

)

mA
(

F

10

1

Forward current I

0.1

0.01
0 0.2 0.4 0.6 0.8 1.0 1.2

Ta = 150°C

Forward voltage VF (V

IR  T

a

100

10

(µA)

R

1

0.1

Reverse current I

0.01

−40 0 40 80 120 160 200

VR = 75 V

Ambient temperature Ta (°C

100°C

25°C

− 20°C

)

35 V

1 V

IR  V

R

100

)

10

µA
(

R

1

0.1

Reverse current I

0.01
0 20406080100120

Reverse voltage VR (V

0.8

0.7

)
pF

0.6

(

t

0.5

0.4

0.3

0.2

Terminal capacitance C

0.1

0

0 20406080100120

)

Reverse voltage VR (V

Ct  V

Ta = 150°C

100°C

25°C

R

f = 1 MHz
T

)

= 25°C

a

)

1.6

1.4

)

1.2

V
(

F

1.0

0.8

0.6

0.4

Forward voltage V

0.2

0

−40 0 40 80 120 160 200

1 000

300

)
A

(

100

F(surge)

30

10

3

1

Forward surge current I

0.3

0.1

0.03

VF  T

a

IF = 100 mA

10 mA

3 mA

Ambient temperature Ta (°C

I

 t

F(surge)

0.3 3 301010.1

Pulse width tW (ms

W

Ta = 25°C

I

F(surge)

t

W

Non repetitive

)

)

2