Panasonic MA2HD08 Datasheet

Schottky Barrier Diodes (SBD)

MA2HD08

Silicon epitaxial planar type

For high-frequency rectification

■ Features

•

Small and thin Half New Mini-power package

•

Allowing to rectify under (I

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage (DC) V

Repetitive peak reverse voltage

Average forward current I

Non-repetitive peak forward I

surge current

Junction temperature T

Storage temperature T

Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave

*

(non-repetitive)

= 1 A) condition

F(AV)

R

V

RRM

F(AV)

FSM

j

stg

30 V

30 V

1A

25 A

125 °C

−40 to +125 °C

3.2 ± 0.3

1.9 ± 0.3

+ 0.1

− 0.05

0.25

3.8 ± 0.2

Half New Mini-Power Type Package

Marking Symbol: PP

Unit : mm

0 to 0.05

12

1.85 ± 0.3

0.9 ± 0.40.9 ± 0.4

1.0 ± 0.2

1 : Anode
2 : Cathode

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Reverse current (DC) I

R

Forward voltage (DC) V

Terminal capacitance C

Reverse recovery time

*

t

rr

Note) 1. Rated input/output frequency: 20 MHz

2. * : trr measuring instrument

Bias Application Unit N-50BU

A

Pulse Generator
(PG-10N)

= 50 Ω

R

s

W.F.Analyzer
(SAS-8130)

= 50 Ω

R

i

VR = 30 V 13 mA

IF = 1 A 0.30 V

F

VR = 10 V, f = 1 MHz 50 pF

t

IF = IR = 100 mA 15 ns

Irr = 0.1 · IR, RL = 100 Ω

V

Input Pulse Output Pulse

t

t

p

r

10%

90%

R

= 2 µs

t

p

= 0.35 ns

t

r

δ = 0.05

t

I

F

= 100 mA

I

F

= 100 mA

I

R

= 100 Ω

R

L

t

rr

I

= 0.1 · I

rr

t

R

1

MA2HD08

Schottky Barrier Diodes (SBD)

IF  V

50°C

75°C

F

100°C

10

Ta = 125°C

1

)

A

(

−1

10

F

25°C

−2

10

−3

10

Forward current I

−4

10

−5

10

0 0.1 0.2 0.3 0.4 0.5 0.6

Forward voltage VF (V

IR  V

1

−1

10

)
A

(

R

Reverse current I

)

Ta = 85°C

−2

10

−3

10

−4

10

−5

10

0 5 10 15 20 25 30

Reverse voltage VR (V

R

25°C

)

2