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Schottky Barrier Diodes (SBD)
MA2HD08
Silicon epitaxial planar type
For high-frequency rectification
■ Features
•
Small and thin Half New Mini-power package
•
Allowing to rectify under (I
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Repetitive peak reverse voltage
Average forward current I
Non-repetitive peak forward I
surge current
Junction temperature T
Storage temperature T
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
*
(non-repetitive)
= 1 A) condition
F(AV)
R
V
RRM
F(AV)
FSM
j
stg
30 V
30 V
1A
25 A
125 °C
−40 to +125 °C
3.2 ± 0.3
1.9 ± 0.3
+ 0.1
− 0.05
0.25
3.8 ± 0.2
Half New Mini-Power Type Package
Marking Symbol: PP
Unit : mm
0 to 0.05
12
1.85 ± 0.3
0.9 ± 0.40.9 ± 0.4
1.0 ± 0.2
1 : Anode
2 : Cathode
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
R
Forward voltage (DC) V
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Rated input/output frequency: 20 MHz
2. * : trr measuring instrument
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
VR = 30 V 13 mA
IF = 1 A 0.30 V
F
VR = 10 V, f = 1 MHz 50 pF
t
IF = IR = 100 mA 15 ns
Irr = 0.1 · IR, RL = 100 Ω
V
Input Pulse Output Pulse
t
t
p
r
10%
90%
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
t
rr
I
= 0.1 · I
rr
t
R
1
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MA2HD08
Schottky Barrier Diodes (SBD)
IF V
50°C
75°C
F
100°C
10
Ta = 125°C
1
)
A
(
−1
10
F
25°C
−2
10
−3
10
Forward current I
−4
10
−5
10
0 0.1 0.2 0.3 0.4 0.5 0.6
Forward voltage VF (V
IR V
1
−1
10
)
A
(
R
Reverse current I
)
Ta = 85°C
−2
10
−3
10
−4
10
−5
10
0 5 10 15 20 25 30
Reverse voltage VR (V
R
25°C
)
2