Panasonic MA2H736 Datasheet

Schottky Barrier Diodes (SBD)

MA2H736

Silicon epitaxial planar type

For switching circuits

■ Features

•

Small and thin Half New Mini-power package

•

Allowing to rectify under (I

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage (DC) V

Repetitive peak reverse voltage

Average forward current I

Non-repetitive peak forward I

surge current

Junction temperature T

Storage temperature T

Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave

*

(non-repetitive)

= 1 A) condition

F(AV)

R

V

RRM

F(AV)

FSM

j

stg

40 V

40 V

1A

30 A

125 °C

−40 to +125 °C

3.2 ± 0.1

1.9 ± 0.1

+ 0.1

− 0.05

0.25

3.8 ± 0.2

Half New Mini-Power Package (2-pin)

Marking Symbol: B

Unit : mm

0 to 0.05

12

1.85 ± 0.2

0.9 ± 0.20.9 ± 0.2

1.0 ± 0.2

1 : Anode
2 : Cathode

■ Electrical Characteristics Ta = 25°C

Parameter Symbol Conditions Min Typ Max Unit

Reverse current (DC) I

Forward voltage (DC) V

Terminal capacitance C

Reverse recovery time

*

Note) 1. Rated input/output frequency: 20 MHz

2. * : trr measuring instrument

Bias Application Unit N-50BU

A

Pulse Generator
(PG-10N)

= 50 Ω

R

s

W.F.Analyzer
(SAS-8130)

= 50 Ω

R

i

R

F

t

t

rr

VR = 50 V 2 mA

IF = 1 A 0.55 V

VR = 10 V, f = 1 MHz 50 pF

IF = IR = 100 mA 30 ns

Irr = 0.1 · IR, RL = 100 Ω

Input Pulse Output Pulse

t

t

p

r

10%

90%

V

R

t

p

= 0.35 ns

t

r

δ = 0.05

= 2 µs

t

I

F

= 100 mA

I

F

= 100 mA

I

R

= 100 Ω

R

L

t

rr

I

= 0.1 · I

rr

t

R

1

MA2H736

Schottky Barrier Diodes (SBD)

IF  V

1

Ta = 125°C

−1

10

)
A

(

F

−2

10

−3

10

Forward current I

−4

10

−5

10

0 0.1 0.2 0.3 0.4 0.5 0.6

F

− 20°C

Forward voltage VF (V

IR  T

2

10

10

)

mA
(

R

1

−1

10

Reverse current I

−2

10

a

VR = 40 V

75°C
25°C

10 V
5 V

VF  T

Ct  V

a

IF = 1 A

100 mA

10 mA

)

R

0.8

0.7

)

0.6

V
(

F

0.5

0.4

0.3

0.2

Forward voltage V

0.1

0

)

–40 0 40 80 120 160 200

Ambient temperature Ta (°C

300

250

)
pF

(

t

200

150

100

Terminal capacitance C

50

10

1

)

mA
(

R

−1

10

−2

10

Reverse current I

−3

10

−4

10

0 102030405060

IR  V

R

Ta = 125°C

75°C

25°C

Reverse voltage VR (V

)

−3

10

−40 0 40 80 120 160 200

Ambient temperature Ta (°C

2

0

)

0 102030405060

Reverse voltage VR (V

)