Panasonic MA2H735 Datasheet
Schottky Barrier Diodes (SBD)
MA2H735
Silicon epitaxial planar type
For switching circuits
■ Features
•
Small and thin Half New Mini-power package
•
Allowing to rectify under (I
•
Low V
(forward voltage) type: VF > 0.5 V（at IF = 1 A）
F
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Repetitive peak reverse voltage
Average forward current I
Non-repetitive peak forward I
surge current
Junction temperature T
Storage temperature T
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
*
(non-repetitive)
= 1 A) condition
F(AV)
R
V
RRM
F(AV)
FSM
j
stg
30 V
30 V
1A
30 A
125 °C
−40 to +125 °C
3.2 ± 0.1
1.9 ± 0.1
+ 0.1
− 0.05
0.25
3.8 ± 0.2
Half New Mini-Power Package
Marking Symbol: A
Unit : mm
0 to 0.05
12
1.85 ± 0.2
0.9 ± 0.20.9 ± 0.2
1.0 ± 0.2
1 : Anode
2 : Cathode
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
Terminal capacitance C
Reverse recovery time
*
Note) 1. Rated input/output frequency: 20 MHz
2. * : trr measuring instrument
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
R
F
t
t
rr
V
VR = 30 V 1 mA
IF = 1 A 0.50 V
VR = 10 V, f = 1 MHz 50 pF
IF = IR = 100 mA 30 ns
Irr = 0.1 · IR, RL = 100 Ω
Input Pulse Output Pulse
t
t
p
r
10%
90%
R
t
p
t
r
δ = 0.05
= 2 µs
= 0.35 ns
t
I
F
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
t
rr
I
= 0.1 · I
rr
t
R
1
MA2H735
Schottky Barrier Diodes (SBD)
IF V
1
Ta = 125°C
−1
10
)
A
(
F
−2
10
−3
10
Forward current I
−4
10
−5
10
0 0.1 0.2 0.3 0.4 0.5 0.6
F
− 20°C
Forward voltage VF (V
75°C
25°C
IR V
10
1
)
mA
(
R
−1
10
−2
10
Reverse current I
−3
10
−4
10
)
0 5 10 15 20 25 30
Reverse voltage VR (V
R
Ta = 125°C
75°C
25°C
)
300
250
)
pF
(
t
200
150
100
Terminal capacitance C
50
0
0 5 10 15 20 25 30
Ct V
R
Ta = 25°C
Reverse voltage VR (V
)
2
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