This product complies with the RoHS Directive (EU 2002/95/EC).
50 Ω 50 Ω
5.5 Ω
D.U.T.
I
F
I
R
0.25 × I
R
t
rr
Fast Recovery Diodes (FRD)
MA2DF62
Silicon Mesa type
For high frequency rectification
Features
Super high speed switching characteristic: trr = 15 ns (typ.)
Low noise type
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Repetitive peak reverse voltage V
Non-repetitive peak reverse surge voltage V
1
Forward current (Average)
*
Non-repetitive peak forward surge current
Junction temperature T
Storage temperature T
Note) *1: TC = 25°C
2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
*
RRM
RSM
I
F(AV)
2
*
I
FSM
j
-40 to +150
stg
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
Reverse recovery time
*
RRM
t
rr
F
Package
Code
TO-220D-B1
Pin Name
1: Cathode
2: Anode
600 V
600 V
10 A
40 A
150
°C
°C
IF = 10 A 1.8 2.5 V
V
= 600 V 30
RRM
IF = 0.5 A, IR = 1.0 A
Irr = 0.25 A
Marking Symbol: MA2DF62
mA
15 25 ns
Thermal resistance (j-c) R
Thermal resistance (j-a) R
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of
current from the operating equipment.
3. *: trr measurement circuit
Publication date: December 2008 SKJ00024AED 1
th(j-c)
th(j-a)
3.0
63
°C/W
°C/W
This product complies with the RoHS Directive (EU 2002/95/EC).
TO-220D-B1 Unit: mm
1.5
+0
−0.4
Solder Dip
4.2 ±0.2
13.7 ±0.2 15.0 ±0.5
2.9 ±0.2
2.6 ±0.1
0.55 ±0.15
4.6 ±0.2
9.9 ±0.3
1.4 ±0.2
0.8 ±0.1
2.54 ±0.30
5.08 ±0.50
1 2
3.0 ±0.5
φ3
.
2
±
0
.
1
0
MA2DF62
2 SKJ00024AED