This product complies with RoHS Directive (EU 2002/95/EC).
D.U.T
t
rr
0.25 × I
R
I
F
I
R
50 Ω
5.5 Ω
50 Ω
Fast Recovery Diodes (FRD)
MA2DF60
Silicon Mesa type
For high frequency rectification
Features
High switching speed t
Soft recovery
rr
Package
Code
TO-220D-B1
Pin Name
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Repetitive peak reverse voltage V
Non-repetitive peak reverse surge voltage
Forward current TC = 25°C I
Non-repetitive peak forward surge current
Junction temperature T
Storage temperature T
Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
RRM
V
RSM
F
*
I
FSM
–40 to +150
j
–40 to +150
stg
600 V
600 V
5 A
40 A
°C
°C
1: Cathode
2: Anode
Marking Symbol: MA2DF60
Intemal Connection
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
Reverse recovery time
*
Thermal resistance (j-a) R
Thermal resistance (j-c) R
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 10 MHz.
3. *: trr measurement circuit
RRM
t
rr
th(j-c)
th(j-a)
IF = 5 mA 1.4 1.7 V
F
V
= 600 V 30
RRM
IF = 0.5 A, IR = 1.0 A
Irr = 0.25 A
15 25 ns
3.0
63
mA
°C/W
°C/W
Publication date: October 2007 SKJ00019AED 1
This product complies with RoHS Directive (EU 2002/95/EC).
TO-220D-B1 Unit: mm
1.5
+0
−0.4
Solder Dip
4.2 ±0.2
13.7 ±0.2 15.0 ±0.5
2.9 ±0.2
2.6 ±0.1
0.55 ±0.15
4.6 ±0.2
9.9 ±0.3
1.4 ±0.2
0.8 ±0.1
2.54 ±0.30
5.08 ±0.50
1 2
3.0 ±0.5
φ
3.2
±
0.10
MA2DF60
2 SKJ00019AED