Panasonic MA2DF31 User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

50 Ω 50 Ω

5.5 Ω

D.U.T.

I

F

I

R

0.25 × I

R

t

rr

Fast Recovery Diodes (FRD)

MA2DF31

Silicon mesa type

For high frequency rectification

 Features

 Super high speed switching characteristic: trr = 20 ns (typ.)
 Low noise type

 Package

Code

TO-220D-B1

Pin Name

 Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Repetitive peak reverse voltage V

Non-repetitive peak reverse surge voltage V

1

Forward current (Average)

*

Non-repetitive peak forward surge current

Junction temperature T

Storage temperature T

Note) *1: TC = 25°C

2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)

*

RRM

RSM

I

F(AV)

2

*

I

FSM

j

stg

300 V

300 V

5 A

30 A

+150

-40 to +150

°C

°C

1: Cathode

2: Anode

 Marking Symbol: MA2DF31

 Electrical Characteristics Ta = 25°C±3°C

Parameter Symbol Conditions Min Typ Max Unit

Forward voltage V

Reverse current I

Reverse recovery time

*

Thermal resistance (j-c) R

Thermal resistance (j-a) R

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of

current from the operating equipment.

3. *: trr measurement circuit

RRM

t

rr

th(j-c)

th(j-a)

IF = 5 A 1.0 1.3 V

F

V

= 300 V 20

RRM

IF = 0.5 A, IR = 1.0 A

Irr = 0.25 A

20 30 ns

3.0

63

mA

°C/W

°C/W

Publication date: December 2008 SKJ00023AED 1

This product complies with the RoHS Directive (EU 2002/95/EC).

0 1.00.5 2.01.5

10

2

10

1

10

−1

10

−2

10

−3

MA2DF31_ IF-V

F

Forward current I

F

(A)

Forward voltage VF (V)

Ta = 150°C

25°C

0

100

300200

400

10

−4

10

−3

10

−2

10

−5

10

−6

10

−7

10

−8

10

−9

MA2DF31_ IR-V

R

Reverse current I

R

(A)

Reverse voltage VR (V)

25°C

Ta = 150°C

0

10

3020

40

120

160

200

80

40

0

MA2DF31_ Ct-V

R

Terminal capacitance C

t

(pF)

Reverse voltage VR (V)

Ta = 25°C

0

200

400

600

0 100

400300

200

Reverse voltage VR

(V)

Reverse power dissipation (Average) P

R(AV)

(m

W

)

DC

0.9

0.8

0.5

MA2DF31_ P

R(AV)-VＲ

t

p

T

I

F

0

2

4

6

0 2

86

4

Forward current (Average) I

F(AV)

(A)

Forward power dissipation (Average) P

F(AV)

(W)

DC

0.5

0.2

0.1

0.05

MA2DF31_ P

F(AV)-IF(AV)

t

p

T

I

F

0

2

4

6

0 50

150

100

Case temperature TC

(°C)

Forward current (Average) I

F(AV)

(A)

tp / T

DC

0.5

0.2

0.1

0.05

MA2DF31_ I

F(AV)-TC

Tj = 150

°C

VR = 300 V

t

p

T

I

MA2DF31

IF  VF IR  VR Ct  V

P

R(AV)

 V

P

R

F(AV)

 I

F(AV)

I

F(AV)

 T

R

C

2 SKJ00023AED