![](/html/da/dac1/dac13741fdd298452f558ca2b63ed570b70a6f27135d2d3237c7d75aa7a32433/bg1.png)
Schottky Barrier Diodes (SBD)
MA2D760
Silicon epitaxial planar type
For switching power supply
9.9 ± 0.3
4.6 ± 0.2
Unit : mm
2.9 ± 0.2
■ Features
•
TO-220D Package
•
Allowing to rectify under (I
•
V
= 90 V guaranteed
R
•
Single type
= 5 A) condition
F(AV)
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Repetitive peak reverse voltage
Average forward current I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
V
F(AV)
RRM
FSM
−40 to +125 °C
j
−40 to +125 °C
stg
90 V
5A
90 A
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
Thermal resistance R
th(j-c)
Note) Rated input/output frequency: 150 kHz
R
VR = 90 V 3 mA
IF = 5 A 0.58 V
F
Direct current (between junction and case)
15.0 ± 0.513.7 ± 0.2
4.2 ± 0.2
3.0 ± 0.5
φ 3.2 ± 0.1
+ 0
− 0.4
1.5
2.6 ± 0.1
1.4 ± 0.2
0.8 ± 0.1
5.08 ± 0.5
1
2.54 ± 0.3
2
TO-220D Package (2-pin)
0.55 ± 0.15
1 : Cathode
2 : Anode
3 °C/W
1
![](/html/da/dac1/dac13741fdd298452f558ca2b63ed570b70a6f27135d2d3237c7d75aa7a32433/bg2.png)
MA2D760
Schottky Barrier Diodes (SBD)
IF V
10
Ta = 125°C
1
)
A
(
F
−1
10
−2
10
Forward current I
−3
10
−4
10
0 0.2 0.4 0.6 0.8 1.0 1.2
F
75°C
25°C
Forward voltage VF (V
IR V
2
10
10
)
mA
(
R
1
−1
10
Reverse current I
−2
10
−3
10
)
0 20406080100120
Reverse voltage VR (V
R
Ta = 125°C
75°C
25°C
)
2