Panasonic MA2D755 Datasheet

Schottky Barrier Diodes (SBD)

MA2D755

Silicon epitaxial planar type

For switching power supply

9.9 ± 0.3

4.6 ± 0.2

Unit : mm

2.9 ± 0.2

■ Features

•

TO-220D Package

•

Allowing to rectify under (I

•

V

= 60 V guaranteed

R

•

Single type

= 5 A) condition

F(AV)

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Repetitive peak reverse voltage

Average forward current I

Non-repetitive peak forward I

surge current

*

Junction temperature T

Storage temperature T

V

F(AV)

RRM

FSM

−40 to +125 °C

j

−40 to +125 °C

stg

60 V

5A

90 A

Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave

(non-repetitive)

■ Electrical Characteristics Ta = 25°C

Parameter Symbol Conditions Min Typ Max Unit

Reverse current (DC) I

Forward voltage (DC) V

Thermal resistance R

th(j-c)

Note) Rated input/output frequency: 150 kHz

R

VR = 60 V 3 mA

IF = 5 A 0.58 V

F

Direct current (between junction and case)

3.0 ± 0.5

φ 3.2 ± 0.1

15.0 ± 0.513.7 ± 0.2

4.2 ± 0.2

1

+ 0

− 0.4

1.5

1.4 ± 0.2

0.8 ± 0.1

5.08 ± 0.5

2.54 ± 0.3

2

TO-220D Package (2-pin)

2.6 ± 0.1

0.55 ± 0.15

1 : Cathode
2 : Anode

3 °C/W

1

MA2D755

Schottky Barrier Diodes (SBD)

IF  V

2

10

10

)
A

(

F

1

−1

10

Forward current I

−2

10

−3

10

Ta = 125°C

0 0.2 0.4 0.6 0.8 1.0 1.2

F

25°C

Forward voltage VF (V

IR  V

2

10

10

)

mA
(

R

1

−1

10

Reverse current I

−2

10

−3

10

)

0 102030405060

Reverse voltage VR (V

R

Ta = 125°C

75°C

25°C

)

600

500

)
pF

(

t

400

300

200

Terminal capacitance C

100

0

0 102030405060

Ct  V

R

Reverse voltage VR (V

)

2