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Fast Recovery Diodes (FRD)
MA2D601
Silicon planar type
For high-frequency rectification
For Snubber circuit of power supplies
For secondary side rectification for a power supply
■ Features
•
High reverse voltage V
•
Short reverse recovery time t
•
TO-220D (Full-pack package) with high dielectric breakdown
voltage > 5.0 kV
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Repetitive peak reverse voltage
Non-repetitive peak reverse V
surge voltage
Average forward current I
Non-repetitive peak forward I
surge current
Junction temperature T
Storage temperature T
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
*
(non-repetitive)
> 600 V
R
rr
< 50nsec
V
RRM
RSM
F(AV)
FSM
j
stg
600 V
600 V
5.0 A
50 A
−40 to +150 °C
−40 to +150 °C
Unit : mm
9.9 ± 0.3
φ 3.2 ± 0.1
15.0 ± 0.513.7 ± 0.2
4.2 ± 0.2
1
1.4 ± 0.2
0.8 ± 0.1
5.08 ± 0.5
2.54 ± 0.3
2
+ 0
− 0.4
1.5
4.6 ± 0.2
2.9 ± 0.2
3.0 ± 0.5
2.6 ± 0.1
0.55 ± 0.15
1 : Cathode
TO-220D Package (2-pin)
2 : Anode
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Repetitive peak reverse current I
RRM1
I
RRM2
Forward voltage (DC) V
Reverse recovery time
Thermal resistance R
*
R
t
rr
th(j-c)
th(j-a)
Note) 1. Rated input/output frequency: 10 MHz
2. Tightening torque-max. 8 kg × cm
3. * : trr measuring circuit
50 Ω
50 Ω
D.U.T
5.5 Ω
V
V
IF = 5.0 A, TC = 25°C 1.5 V
F
IF = 1 A, IR = 1 A 50 ns
= 600 V, TC = 25°C 100 µA
RRM
= 600 V, Tj = 150°C 500 µA
RRM
3.0 °C/W
63 °C/W
t
rr
I
F
0.1 × I
I
R
R
1
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MA2D601
Fast Recovery Diodes (FRD)
IF V
100
10
Ta = 150°C
)
A
(
1
F
0.1
0.01
25°C
F
Forward current I
0.001
0.000 1
0 0.5 1 1.5 2 2.5
Forward voltage VF (V
IR V
100
10
)
µA
(
R
1
0.1
Reverse current I
0.01
0.001
)
0 100 200 300 400 500 600
Reverse voltage VR
R
Ta = 150°C
25°C
(V)
2