Panasonic MA2C859 Datasheet
Band Switching Diodes
1st Band
2nd Band
φ 0.45 max.
φ 1.75 max.
13 min.
0.2 max.0.2 max.
13 min.
2.2 ± 0.3
COLORED BAND
INDICATES
CATHODE
2
1
MA2C859
Silicon epitaxial planar type
For band switching
■ Features
•
Extra-small DHD envelope, allowing to insert into a 5 mm pitch
hole
•
Less voltage dependence of the terminal capacitance C
•
Low forward dynamic resistance r
•
Optimum for a band switching of a tuner
f
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Forward current (DC) I
Operating ambient temperature
Storage temperature T
R
F
T
opr
stg
35 V
100 mA
−25 to +85 °C
−55 to +100 °C
t
Unit : mm
1 : Cathode
2 : Anode
JEDEC : DO-34
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
1
*
I
R
*
f
*
r
f
VR = 33 V 100 nA
IF = 100 mA 1.0 V
F
VR = 6 V, f = 1 MHz 0.8 1.2 pF
t
2
IF = 2 mA, f = 100 MHz 0.5 0.65 Ω
3
Reverse current (DC)
Forward voltage (DC) V
Terminal capacitance C
Forward dynamic resistance r
Note) 1．Rated input/output frequency: 100 MHz
2．*1: Measurement in light shielded condition
*2:rf measuring instrument: Nihon Koshuha MODEL TDC-121A Lead length 5mm
*3:rf measuring instrument: YHP 4191A Lead length 5mm
■ Cathode Indication
Type No. MA2C859
Color 1st Band Black
2nd Band Blue
0.77 0.98 Ω
1
MA2C859
Band Switching Diodes
IF V
2
10
10
)
mA
(
F
1
−1
10
Forward current I
10
10
Ta = 85°C
−2
−3
0 0.2 0.4 0.6 0.8 1.0 1.2
F
− 20°C
50°C 25°C
Forward voltage VF (V
f
10
)
Ω
(
8
f
6
4
2
rf
IF = 2 mA
= 25°C
T
a
Tester: TDC-121A
r
f
Forward dynamic resistance r
0
1103 30 100
Frequency f (MHz
IR V
3
10
)
2
10
pA
(
R
10
1
Reverse current I
−1
10
)
01020304050
Reverse voltage VR (V
R
Ta = 85°C
50°C
25°C
)
3
10
)
2
10
pA
(
R
10
1
Reverse current I
−1
10
−40 0 40 80 120
Ambient temperature Ta (°C
rf f
16
14
)
Ω
(
f
12
10
8
6
4
Forward dynamic resistance r
2
0
1103 30 1002 5 20 50
)
IF = 2 mA
= 25°C
T
a
Tester: YHP4191A
r
f
Frequency f (MHz
)
3.2
2.8
)
Ω
(
f
2.4
2.0
1.6
1.2
0.8
Forward dynamic resistance r
0.4
0
0.1
IR T
a
VR = 33 V
rf I
f = 100 MHz
T
r
1 10 100
20 V
f
= 25°C
a
Tester: TDC-121A
f
Forward current IF (mA
)
)
rf I
3.2
2.8
)
Ω
(
f
2.4
2.0
1.6
1.2
0.8
Forward dynamic resistance r
0.4
0
0.1
f = 1 000 MHz
T
Tester: YHP4191A
r
f
1 10 1000.3 3 30
Forward current IF (mA
2
= 25°C
a
F
2.0
)
1.6
pF
(
t
1.2
0.8
0.4
Terminal capacitance C
0
01020304050
)
Ct V
R
f = 1 MHz
T
Reverse voltage VR (V
= 25°C
a
)
1 000
)
A
(
100
F(surge)
10
1
Forward surge current I
0.1
0.03
I
t
f(surge)
0.3 3 301010.1
W
Pulse width tW (ms
)
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