Panasonic MA2C856 Datasheet
Band Switching Diodes
φ 0.45 max.
φ 1.75 max.
13 min.
0.2 max.0.2 max.
13 min.
2.2 ± 0.3
COLORED BAND
INDICATES
CATHODE
2
1
MA2C856
Silicon epitaxial planar type
For band switching
■ Features
•
Extra-small DHD envelope, allowing to insert into a 5 mm pitch
hole
•
Less voltage dependence of the terminal capacitance C
•
Low forward dynamic resistance r
•
Optimum for a band switching of a tuner
f
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Forward current (DC) I
Operating ambient temperature
Storage temperature T
R
F
T
opr
stg
35 V
100 mA
−25 to +85 °C
−55 to +100 °C
t
Unit : mm
1 : Cathode
2 : Anode
JEDEC : DO-34
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC) V
Terminal capacitance C
Forward dynamic resistance r
*
I
R
F
t
f
Note) 1．Rated input/output frequency: 100 MHz
2．* : Measurement with the beam shielded
■ Cathode Indication
Type No. MA2C856
Color Yellow
VR = 33 V 100 nA
IF = 100 mA 1 V
VR = 15 V, f = 1 MHz 2 pF
IF = 3 mA, f = 100 MHz 0.85 Ω
1
MA2C856
Band Switching Diodes
IF V
2
10
)
10
mA
(
F
1
−1
10
Forward current I
75°C
Ta = 125°C
−2
10
0 0.2 0.4 0.6 0.8 1.0
F
Forward voltage VF (V
1.6
)
Ω
(
f
1.2
0.8
25°C
− 20°C
IF = 3 mA
T
)
= 25°C
a
IR V
3
10
2
10
)
nA
(
R
10
1
Reverse current I
−1
10
−2
10
0 1020304050
R
Ta = 125°C
75°C
25°C
Reverse voltage VR (V
rf frf f
8
)
Ω
(
f
6
4
IF = 3 mA
T
a
= 25°C
IR T
10 V
rf I
a
F
f = 100 MHz
= 25°C
T
a
)
3
10
2
10
)
nA
(
R
10
1
Reverse current I
−1
10
−2
10
)
2.0
)
Ω
(
f
1.5
1.0
VR = 25 V
0 40 80 120 160
Ambient temperature Ta (°C
0.4
Forward dynamic resistance r
0
10 10030 300 1 000
Frequency f (MHz
Ct V
3.2
)
pF
2.4
(
t
1.6
0.8
Terminal capacitance C
0
0
10 20 30 40
R
f = 1 MHz
T
Reverse voltage VR (V
)
= 25°C
a
2
Forward dynamic resistance r
0
1
10 1003 30 300 1 000
Frequency f (MHz
)
0.5
Forward dynamic resistance r
0
−1
10
11010
Forward current IF (mA
2
)
)
2
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