Panasonic MA2C723 Datasheet

Schottky Barrier Diodes (SBD)

φ 0.45 max.

φ 1.75 max.

13 min.

0.2 max.0.2 max.

13 min.

2.2 ± 0.3

COLORED BAND
INDICATES
CATHODE

2

1

MA2C723

Silicon epitaxial planar type

For super-high speed switching circuit

For small current rectification

■ Features

•

Allowing to rectify under (I

•

Sealed in DO-34 (DHD) package

•

Allowing high-density mounting (5 mm pitch insertion)

•

High reliability

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage (DC) V

Non-repetitive peak forward I

surge current

Peak forward current I

Forward current (DC) I

Junction temperature T

Storage temperature T

Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)

*

= 200 mA) condition

F(AV)

R

FSM

FM

F(AV)

j

−55 to +150 °C

stg

30 V

1.5 A

300 mA

200 mA

150 °C

Unit : mm

1 : Casthode
2 : Anode

JEDEC : DO-34

■ Electrical Characteristics Ta = 25°C

Parameter Symbol Conditions Min Typ Max Unit

Reverse current (DC) I

R

Forward voltage (DC) V

Terminal capacitance C

Reverse recovery time

*

t

rr

Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a

human body and the leakage of current from the operating equipment

  2. Rated input/output frequency: 1 000 MHz

3. * : trr measuring instrument

Bias Application Unit N-50BU

Pulse Generator
(PG-10N)

= 50 Ω

R

s

A

W.F.Analyzer
(SAS-8130)

= 50 Ω

R

i

VR = 30 V 50 µA

IF = 200 mA 0.55 V

F

VR = 0 V, f = 1 MHz 30 pF

t

IF = IR = 100 mA 3.0 ns

Irr = 10 mA, RL = 100 Ω

■ Cathode Indication

Color band in pink

Input Pulse Output Pulse

t

t

p

r

10%

90%

V

R

t

p

t

r

δ = 0.05

= 2 µs
= 0.35 ns

t

I

F

= 100 mA

I

F

= 100 mA

I

R

= 100 Ω

R

L

t

rr

I

= 10 mA

rr

t

1

MA2C723

Schottky Barrier Diodes (SBD)

3

10

2

10

)

Ta = 125°C

mA
(

F

10

1

Forward current I

−1

10

−2

10

0 0.80.2 0.4 0.6

IF  V

Forward voltage VF (V

Ct  V

40

)
pF

30

(

t

20

F

75°C 25°C

− 20°C

R

)

f = 1 MHz

= 25°C

T

a

VF  T

0.6

0.5

)
V

(

0.4

F

0.3

0.2

a

IF = 200 mA

100 mA

Forward voltage V

0.1

0

−40 0 40 80 120 160 200

1 mA

Ambient temperature Ta (°C

IR  T

4

10

3

10

)
µA

(

R

2

10

10

a

VR = 30 V

15 V
5 V

IR  V

4

10

3

10

)
µA

(

R

2

10

10

Reverse current I

1

−1

10

0 5 10 15 20 25 30

)

Reverse voltage VR (V

R

Ta = 125°C

75°C

25°C

)

10

Terminal capacitance C

0

0 5 10 15 20 25 30

Reverse voltage VR (V

Reverse current I

1

−1

10

)

−40 0 40 80 120 160 200

Ambient temperature Ta (°C

)

2