Panasonic MA2C719 Datasheet
Schottky Barrier Diodes (SBD)
1st Band
2nd Band
φ 0.45 max.
φ 1.75 max.
13 min.
0.2 max.0.2 max.
13 min.
2.2 ± 0.3
COLORED BAND
INDICATES
CATHODE
2
1
MA2C719
Silicon epitaxial planar type
For high-frequency rectification
■ Features
•
DO-34 (DHD) package, allowing to rectify under (I
mA) condition
•
Allowing high-density mounting (5 mm pitch insertion)
•
Optimum for high-frequency rectification because of its short
reverse recovery time (t
•
High rectification efficiency caused by its low forward-risevoltage (V
•
High reliability achieved by the glass sealed package
)
F
)
rr
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Repetitive peak reverse voltage
Peak forward current I
Average forward current I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
V
F(AV)
R
RRM
FM
FSM
j
stg
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
40 V
40 V
1A
500 mA
30 A
125 °C
−55 to +125 °C
F(AV)
= 500
Unit : mm
1 : Cathode
2 : Annde
JEDEC : DO-34
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
R
Forward voltage (DC) V
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 400 MHz
3. * : trr measuring instrument
Bias Application Unit N-50BU
Pulse Generator
(PG-10N)
= 50 Ω
R
s
A
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
VR = 35 V 100 µA
IF = 500 mA 0.55 V
F
VR = 0 V, f = 1 MHz 60 pF
t
IF = IR = 100 mA 5 ns
Irr = 10 mA, RL = 100 Ω
■ Cathode Indication
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
t
p
= 0.35 ns
t
r
δ = 0.05
= 2 µs
t
I
F
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
t
rr
I
= 10 mA
rr
t
Color Silver Silver
1st Band 2nd Band
1
MA2C719
Schottky Barrier Diodes (SBD)
IF V
3
10
Ta = 100°C
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.1 0.2 0.3 0.4 0.5 0.6
F
Forward voltage VF (V
IR T
5
10
4
10
)
µA
(
R
3
10
2
10
a
VR = 40 V
35 V
5 V
25°C
− 20°C
IR V
Ct V
R
R
Ta = 100°C
25°C
)
0.8
0.7
)
0.6
V
(
F
0.5
0.4
0.3
0.2
Forward voltage V
0.1
0
−40 0 40 80 120 160 200
10 000
)
A
(
1 000
F(surge)
100
5
10
4
10
)
µA
(
R
3
10
2
10
Reverse current I
10
1
)
0 102030405060
Reverse voltage VR (V
80
70
)
pF
60
(
t
50
40
30
VF T
a
IF = 500 mA
100 mA
10 mA
Ambient temperature Ta (°C
I
t
F(surge)
W
Ta = 25°C
I
F(surge)
t
W
Non repetitive
)
Reverse current I
10
1
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
20
Terminal capacitance C
10
0
)
0 102030405060
Reverse voltage VR (V
)
10
Forward surge current I
1
0.3
3 30 300100101
Pulse width tW (ms
)
2
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