Panasonic MA2C700A, MA2C700 Datasheet
Schottky Barrier Diodes (SBD)
1st Band
2nd Band
φ 0.45 max.
φ 1.75 max.
13 min.
0.2 max.0.2 max.
13 min.
2.2 ± 0.3
COLORED BAND
INDICATES
CATHODE
2
1
MA2C700, MA2C700A
Silicon epitaxial planar type
For ordinary wave detection
For super high speed switching
■ Features
•
Low forward rise voltage (V
efficiency (η)
•
Small temperature coefficient of forward characteristic
•
Extremely low reverse current I
•
DO-34(DHD) envelope, allowing to insert to a 5 mm pitch hole
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage
(DC)
Peak reverse
voltage
Peak forward current I
Forward current (DC) I
Junction temperature T
Storage temperature T
MA2C700
MA2C700A
MA2C700
MA2C700A
) and satisfactory wave detection
F
R
V
R
15 V
30
V
RM
15 V
30
FM
F
j
stg
150 mA
30 mA
125 °C
−55 to +125 °C
Unit : mm
1 : Cathode
2 : Anode
JEDEC : DO-34
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC) V
Terminal capacitance C
Reverse recovery time
Detection efficiency η Vin = 3 V
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring instrument
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
W.F.Analyzer
(SAS-8130)
R
i
*
= 50 Ω
MA2C700
MA2C700A
I
R
VR = 15 V 100 nA
VR = 30 V 150
F1
V
F2
t
rr
IF = 1 mA 0.4 V
IF = 30 mA 1 V
VR = 1 V, f = 1 MHz 1.3 pF
t
IF = IR = 10 mA 1 ns
Irr = 1 mA, RL = 100 Ω
RL = 3.9 kΩ, CL = 10 pF
Input Pulse Output Pulse
t
t
p
r
V
R
10%
90%
t
= 2 µs
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
= 10 mA
I
F
= 10 mA
I
R
= 100 Ω
R
L
, f = 30 MHz 60 %
(peak)
■ Cathode Indication
Type No. MA2C700 MA2C700A
t
rr
I
= 1 mA
rr
t
Color 1st Band Silver Silver
2nd Band Green
1
MA2C700, MA2C700A
Common characteristics charts
I
V
F
3
10
F
Schottky Barrier Diodes (SBD)
VF T
1.0
a
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
Ta = 125°C
Forward voltage VF (V
75°C 25°C
− 20°C
)
Characteristics charts of MA2C700
V
5
10
4
10
)
nA
(
R
3
10
2
10
Reverse current I
10
R
Ta = 125°C
75°C
25°C
0.8
)
V
(
F
0.6
0.4
Forward voltage V
0.2
0
−40 0 40 80 120 160
IF = 30 mA
Ambient temperature Ta (°C
Ct V
2.4
2.0
)
pF
(
t
1.6
1.2
0.8
Terminal capacitance C
0.4
R IR
f = 1 MHz
T
= 25°C
a
10 mA
3 mA
)
5
10
4
10
)
nA
(
R
3
10
2
10
Reverse current I
10
IR T
a
V
= 15 V
R
3 V
1 V
1
0 5 10 15 20 25 30
Reverse voltage VR (V
)
Characteristics charts of MA2C700A
V
5
10
4
10
)
nA
(
R
3
10
2
10
Reverse current I
10
1
0 5 10 15 20 25 30
Reverse voltage VR (V
R
Ta = 125°C
75°C
25°C
)
2
0
0 5 10 15 20 25 30
Reverse voltage VR (V
Ct V
2.4
2.0
)
pF
(
t
1.6
1.2
0.8
Terminal capacitance C
0.4
0
0 5 10 15 20 25 30
R IR
Reverse voltage VR (V
)
f = 1 MHz
= 25°C
T
a
)
1
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
IR T
5
10
4
10
)
nA
(
R
3
10
2
10
Reverse current I
10
1
−40 0 40 80 120 160 200
a
V
3 V
1 V
Ambient temperature Ta (°C
= 30 V
R
)
)
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