Panasonic MA2C195 Datasheet

Switching Diodes

1st Band 2nd Band

φ 0.45 max.

φ 1.75 max.

13 min.

0.2 max.0.2 max.

13 min.

2.2 ± 0.3

COLORED BAND INDICATES CATHODE

2

1

MA2C195

Silicon epitaxial planar type

For switching circuits

■ Features

•

Low forward dynamic resistance r

•

Small terminal capacitance, C

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage (DC) V

Repetitive peak reverse voltage

Average forward current I

Repetitive peak forward current

Non-repetitive peak forward I

surge current

Junction temperature T

Storage temperature T

Note) * : t = l s

*

f

t

R

V

RRM

F(AV)

I

FRM

FSM

stg

j

100 mA

225 mA

500 mA

200 °C

−55 to +200 °C

Unit : mm

35 V

35 V

1 : Cathode 2 : Anode

JEDEC : DO-34

■ Electrical Characteristics Ta = 25°C

Parameter Symbol Conditions Min Typ Max Unit

Reverse current (DC) I

Forward voltage (DC) V

Reverse voltage (DC) V

Terminal capacitance C

Forward dynamic resistance r

Reverse recovery time

*

Note) 1. Rated input/output frequency: 2.5 kHz

2. * : trr measuring circuit

■ Cathode Indication

Type No. MA2C195

Color 1st Band White

2nd Band White

R1

I

R2

I

R3

F

R

t

f

t

rr

Pulse Generator (PG-10N)

= 50 Ω

R

s

VR = 15 V 0.005 µA

VR = 30 V 0.01 µA

VR = 35 V, Ta = 150°C 100 µA

IF = 100 mA 1.2 V

IR = 100 µA35V

VR = 0 V, f = 1 MHz 4 pF

IF = 3 mA, f = 30 MHz 2.5 Ω

IF = 10 mA, VR = 1 V 0.2 ms

Irr = 0.1 · IR, RL = 100 Ω

Bias Application Unit N-50BU

A

W.F.Analyzer (SAS-8130)

= 50 Ω

R

i

Input Pulse Output Pulse

t

t

p

r

10%

90%

V

R

= 2 µs

t

p

= 0.35 ns

t

r

δ = 0.05

t

I

F

= 10 mA

I

F

= 1 V

V

R

= 100 Ω

R

L

t

rr

I

= 0.1 · I

rr

t

R

1

MA2C195

Switching Diodes

IF  V

3

10

2

10

)

mA (

F

10

1

Forward current I

−1

10

−2

10

0 0.2 0.4 0.6 0.8 1.0 1.2

F

Forward voltage VF (V

Ct  V

6

5

) pF

(

t

4

3

R

Ta = 150°C

100°C

25°C

– 20°C

)

f = 1 MHz

= 25°C

T

a

VF  T

1.0

0.8

) V

(

F

0.6

0.4

Forward voltage V

0.2

0

−40 0 40 80 120 160

a

IF = 10 mA

Ambient temperature Ta (°C

rf  I

100

)

Ω

(

f

10

1

F

f = 30 MHz

3 mA

1 mA

0.1 mA

)

IR  V

3

10

2

10

) µA

(

R

10

1

Reverse current I

−1

10

−2

10

0 1020304050

R

Ta = 150°C

100°C

25°C

Reverse voltage VR (V

)

2

Terminal capacitance C

1

0

0 102030405060

Reverse voltage VR (V

0.1

Forward dynamic resistance r

0.01

0.1

)

1100.3 3 30 100

Forward current IF (mA

)

2

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