Panasonic MA2C167, MA2C166, MA2C165 Datasheet
Switching Diodes
φ 0.45 max.
φ 1.75 max.
13 min.
0.2 max.0.2 max.
13 min.
2.2 ± 0.3
COLORED BAND
INDICATES
CATHODE
2
1
MA2C165, MA2C166, MA2C167
Silicon epitaxial planar type
For switching circuits
■ Features
•
Short reverse recovery time t
•
Small terminal capacitance, C
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage
(DC)
Repetitive peak
reverse voltage
Average forward current I
Repetitive peak forward current
Non-repetitive peak forward I
surge current
Junction temperature T
Storage temperature T
Note) * : t = 1 s
MA2C165 V
MA2C166 50
MA2C167 75
MA2C165 V
MA2C166 50
MA2C167 75
*
rr
t
35 V
35 V
100 mA
225 mA
500 mA
200 °C
−55 to +200 °C
RRM
F(AV)
I
FRM
FSM
R
j
stg
Unit : mm
1 : Cathode
2 : Anode
JEDEC : DO-34
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) MA2C165 I
R
MA2C166 VR = 15 V 0.025
MA2C167 VR = 20 V 0.012 0.025
MA2C165 VR = 35 V, Ta = 150°C 100
MA2C166 VR = 50 V, Ta = 150°C 100
MA2C167 VR = 75 V, Ta = 150°C 50 100
Forward voltage (DC) V
Reverse voltage (DC) MA2C165 V
Terminal capacitance C
Reverse recovery time*MA2C165 t
F
R
t
rr
MA2C166/167
Note) 1.
Rated input/output frequency: 100 MHz (MA2C165), 250 MHz (MA2C167), 1 000 MHz (MA2C166) 2. * : trr measuring circuit
■ Cathode Indication
Type No. MA2C165 MA2C166 MA2C167
Color White Green Violet
VR = 15 V 0.025 µA
VR = 30 V 0.1
VR = 50 V 5
VR = 75 V 5
IF = 100 mA 0.95 1.2 V
IR = 5 µA35V
VR = 0 V, f = 1 MHz 0.9 2 pF
IF = 10 mA, VR = 1 V, 10 ns
Irr = 0.1 · IR, RL = 100 Ω 2.2 4
1
MA2C165, MA2C166, MA2C167
Switching Diodes
3
10
IF V
F
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
2
10
10
)
µA
(
R
1
−1
10
Reverse current I
−2
10
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
T
VR = 35 V
trr measuring circuit
a
MA2C165
15 V
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
2
10
MA2C166
MA2C167
10
)
µA
(
R
1
−1
10
Reverse current I
−2
10
t
IR T
I
F
= 10 mA
I
F
= 1 V
V
R
= 100 Ω
R
L
a IR
VR = 75 V
t
rr
I
= 0.1 · I
rr
50 V
20 V
2
10
)
mA
(
F
t
R
10
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V
VF T
1.0
0.8
)
V
(
F
0.6
0.4
Forward voltage V
0.2
Ta = 150°C
75°C
25°C
− 20°C
)
a
IF = 20 mA
10 mA
1 mA
0.1 mA
−3
10
0 40 80 120 160 200
Ambient temperature Ta (°C
V
2
10
10
)
µA
(
R
1
−1
10
Reverse current I
−2
10
−3
10
04010 3020
R
Ta = 150°C
Reverse voltage VR (V
MA2C165
100°C
25°C
R
0.01 mA
f = 1 MHz
= 25°C
T
a
)
)
−3
10
0 40 80 120 160 200
)
)
Ambient temperature Ta (°C
MA2C166
MA2C167
IR V
2
10
10
)
µA
(
R
1
−1
10
Reverse current I
−2
10
−3
10
08020 6040
Reverse voltage VR (V
R IR
)
Ta = 150°C
100°C
25°C
)
0
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
Ct V
2.0
)
1.6
pF
(
t
1.2
0.8
0.4
Terminal capacitance C
0
048121620
MA2C165
MA2C166, MA2C167
Reverse voltage VR (V
2
Loading...