Panasonic MA2B190 Datasheet

Switching Diodes

24 min.4.5 max.24 min.

φ 0.56 max.

φ 1.95 max.

COLORED BAND
INDICATES
CATHODE

1st Band
2nd Band

1

2

MA2B190

Silicon epitaxial planar type

For switching circuits

■ Features

•

Low forward dynamic resistance r

•

Small terminal capacitance, C

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage (DC) V

Repetitive peak reverse voltage V

Average forward current I

Repetitive peak forward current

Non-repetitive peak forward I

surge current

Junction temperature T

Storage temperature T

Note) * : t = 1 s

*

f

t

R

RRM

F(AV)

I

FRM

FSM

j

stg

100 mA

225 mA

500 mA

200 °C

−55 to +200 °C

Unit : mm

35 V

35 V

1: Cathode
2: Anode

JEDEC: DO-35

■ Electrical Characteristics Ta = 25°C

Parameter Symbol Conditions Min Typ Max Unit

Reverse current (DC) I

R1

I

R2

I

R3

Forward voltage (DC) V

Reverse voltage (DC) V

Terminal capacitance C

Forward dynamic resistance r

3

Reverse recovery time

Note) 1. Rated input/output frequency: 2.5 MHz

2. *1:rf measuring instrument: Nihon Koshuha Model TDC-121A

*2:rf measuring instrument: YHP 4191A RF IMPEDANCE ANALYZER

*

*

f

*

r

f

t

rr

*3 :trr measuring circuit

■ Cathode Indication

Type No. MA2B190

Color 1st Band White

2nd Band White

Pulse Generator
(PG-10N)
R

s

VR = 15 V 0.005 µA

VR = 30 V 0.01 µA

VR = 35 V, Ta = 150°C 100 µA

IF = 100 mA 1.2 V

F

IR = 100 µA35V

R

VR = 0 V, f = 1 MHz 4 pF

t

1

IF = 3 mA, f = 30 MH

2

IF = 3 mA, f = 30 MH

IF = 10 mA, VR = 1 V 0.2 ms

Irr = 0.1 · IR, RL = 100 Ω

Bias Application Unit N-50BU

A

= 50 Ω

W.F.Analyzer
(SAS-8130)

= 50 Ω

R

i

t

2.5 Ω

3.6 Ω

I

F

= 10 mA

I

F

= 1 V

V

R

= 100 Ω

R

L

t

rr

I

= 0.1 · I

rr

t

R

Z

Z

Input Pulse Output Pulse

t

t

p

r

10%

90%

V

R

= 2 µs

t

p

= 0.35 ns

t

r

δ = 0.05

1

MA2B190

Switching Diodes

IF  V

3

10

2

10

)

mA
(

F

10

1

Forward current I

−1

10

−2

10

0 0.2 0.4 0.6 0.8 1.0 1.2

F

Forward voltage VF (V

 V

6

5

)

pF

(

t

4

3

R

Ta = 150°C

100°C

25°C

− 20°C

)

f = 1 MHz

= 25°C

T

a

VF  T

1.0

0.8

)
V

(

F

0.6

0.4

Forward voltage V

0.2

0

−40 0 40 80 120 160

a

Ambient temperature Ta (°C

rf  I

100

)

Ω

(

f

10

1

F Ct

f = 30 MHz

IF = 10 mA

3 mA

1 mA

0.1 mA

IR  V

3

10

2

10

)
nA

(

R

10

1

Reverse current I

−1

10

−2

10

0 1020304050

)

Reverse voltage VR (V

R

Ta = 150°C

100°C

25°C

)

2

Terminal capacitance C

1

0

0 102030405060

Reverse voltage VR (V

0.1

Forward dynamic resistance r

0.01

0.1

)

1100.3 3 30 100

Forward current IF (mA

)

2