Switching Diodes
MA2B182
Silicon epitaxial planar type
For high-voltage switching circuits, small power rectification
■ Features
•
High reverse voltage (V
•
Large output current I
•
DO-35 Package
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Repetitive peak reverse voltage
Output current I
Repetitive peak reverse current
Non-repetitive peak forward I
surge current surge current
Average power dissipation P
Junction temperature T
Storage temperature T
Note) * : t = l s
= 200 V)
R
O
*
V
I
R
RRM
O
FRM
FSM
F(AV)
j
stg
200 V
250 V
200 mA
625 mA
1A
400 mW
175 °C
−65 to +175 °C
COLORED BAND
INDICATES
CATHODE
1st Band
2nd Band
φ 0.56 max.
1
2
φ 1.95 max.
Unit : mm
24 min.4.5 max.24 min.
1: Cathode
2: Anode
JEDEC: DO-35
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
Reverse voltage (DC) V
Terminal capacitance C
R
F
R
t
Note) Rated input/output frequency: 3 MHz
■ Cathode Indication
Type No. MA2B182
Color 1st Band White
2nd Band Green
VR = 200 V 200 nA
IF = 200 mA 1.2 V
IR = 100 µA 250 V
VR = 0 V, f = 1 MHz 4.5 pF
1
MA2B182
Switching Diodes
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
IF V
Forward voltage VF (V
IR V
1
−1
10
)
µA
(
R
−2
10
−3
10
F
Ta = 150°C
R
Ta = 150°C
100°C
25°C
− 20°C
)
100°C
VF T
1.6
1.4
)
1.2
V
(
F
1.0
0.8
0.6
0.4
Forward voltage V
0.2
0
0 40 80 120 160 200
a
IF = 100 mA
Ambient temperature Ta (°C
10 mA
1 mA
IR T
10
1
)
µA
(
R
−1
10
−2
10
Reverse current I
−3
10
−4
10
0 20 40 60 80 100 120 140 160 180
)
VR = 200 V
Ambient temperature Ta (°C
a
)
Reverse current I
−4
10
−5
10
0 40 80 120 160 200
Reverse voltage VR (V
25°C
)
2