Panasonic MA2B162A, MA2B162, MA2B161, MA2B150 Datasheet
Switching Diodes
MA2B150, MA2B161, MA2B162, MA2B162A
Silicon epitaxial planar type
For switching circuits
■ Features
•
Short reverse recovery time t
•
Small terminal capacitance, C
rr
t
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage
(DC)
Repetitive peak
reverse voltage
Average forward current I
Repetitive peak forward current
Non-repetitive peak forward I
surge current
Junction temperature T
Storage temperature T
Note) * : t = 1 s
*
MA2B150
MA2B161
MA2B162
MA2B162A
MA2B150
MA2B161
MA2B162
MA2B162A
V
F(AV)
I
V
RRM
FRM
FSM
R
j
−55 to +150 °C
stg
120
120
100 mA
225 mA
500 mA
200 °C
35 V
50
75
35 V
50
75
COLORED BAND
INDICATES
CATHODE
1st Band
2nd Band
φ 0.56 max.
1
2
φ 1.95 max.
Unit : mm
24 min.4.5 max.24 min.
1 : Cathode
2 : Anode
JEDEC : DO-35
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC)
MA2B150
I
R
VR = 15 V 0.025 µA
VR = 30 V 0.1
MA2B161
VR = 15 V 0.025
VR = 50 V 5
MA2B162
VR = 20 V 0.012 0.025
VR = 75 V 5
MA2B162A
VR = 20 V 0.012 0.025
VR = 120 V 5
MA2B150
MA2B161
MA2B162
MA2B162A
Forward voltage (DC) V
Reverse voltage (DC)
MA2B150
Terminal capacitance C
Reverse recovery time*MA2B150
MA2B161/162/162A
V
t
rr
VR = 35 V, Ta = 150°C 100
VR = 50 V, Ta = 150°C 100
VR = 75 V, Ta = 150°C 50 100
VR = 75 V, Ta = 150°C 50 100
IF = 100 mA 0.95 1.2 V
F
IR = 5 µA35V
R
VR = 0 V, f = 1 MHz 0.9 2 pF
t
IF = 10 mA, VR = 1 V, RL = 100 Ω 10 ns
Measure when Irr = 0.1 · I
■ Cathode Indication
Type No. MA2B150 MA2B161 MA2B162 MA2B162A
Color 1st Band White Green Violet Black
2nd Band Black
R
2.2 4
Note) 1. Rated input/output frequency:
100 MHz
2. * : trr measuring circuit
1
MA2B150, MA2B161, MA2B162, MA2B162A
Switching Diodes
3
10
IF V
F
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
2
10
10
)
µA
(
R
1
−1
10
Reverse current I
−2
10
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
V
Ta = 150°C
R
MA2B150
100°C
25°C
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
trr measuring circuit
2
10
MA2B161
MA2B162
MA2B162A
10
)
µA
(
R
1
−1
10
Reverse current I
−2
10
t
I
IR V
Ta = 150°C
100°C
25°C
F
= 10 mA
I
F
= 6 V
V
R
= 100 Ω
R
L
R IR
t
rr
I
= 0.1 · I
rr
2
10
)
mA
(
t
R
F
10
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V
VF T
1.0
0.8
)
V
(
F
0.6
0.4
Forward voltage V
0.2
a
Ta = 150°C
75°C
25°C
− 20°C
)
IF = 20 mA
10 mA
1 mA
0.1 mA
−3
10
04010 3020
Reverse voltage VR (V
T
2
10
10
)
µA
(
R
1
−1
10
Reverse current I
−2
10
−3
10
0 40 80 120 160 200
a
VR = 35 V
Ambient temperature Ta (°C
)
MA2B150
15 V
R
0.01 mA
f = 1 MHz
= 25°C
T
a
)
)
−3
10
0 20406080100
Reverse voltage VR (V
2
10
MA2B162A
10
)
µA
(
R
1
−1
10
Reverse current I
−2
10
−3
10
0 40 80 120 160 200
)
IR T
MA2B161
MA2B162
Ambient temperature Ta (°C
VR = 120 V
)
a IR
75 V
50 V
20 V
)
0
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
Ct V
2.0
)
1.6
pF
(
t
1.2
0.8
0.4
Terminal capacitance C
0
048121620
MA2B150
MA2B161, MA2B162, MA2B162A
Reverse voltage VR (V
2
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