Panasonic MA27P120G User Manual
This product complies with RoHS Directive (EU 2002/95/EC).
PIN diodes
MA27P120G
Silicon planar type
For high frequency switch
Features
Small terminal capacitance C
Low forward dynamic resistance r
t
f
Package
Code
SSSMini2-F3
Pin Name
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Forward current I
Power dissipation
Junction temperature T
Storage temperature T
Note) *: With a glass epoxy PC board.
*
P
R
F
D
j
stg
60 V
100 mA
150 mW
150
–55 to +150
°C
°C
1: Anode
2: Cathode
Marking Symbol: U
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward current V
Reverse current I
R
Terminal capacitance C
Forward dynamic resistance
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. *: rf measurement device: agilent model 4291B
*
r
IF = 10 mA 1.0 V
F
VR = 60 V 100 nA
VR = 1 V, f = 1 MHz 0.27 pF
t
IF = 10 mA, f = 100 MHz 0.8
f
W
Publication date: October 2007 SKL00027AED 1
This product complies with RoHS Directive (EU 2002/95/EC).
0.4
0.6 0.8 1.0
10
−2
10
−1
1
10
10
3
10
2
MA27P12_ IF - V
F
Forward current I
F
(mA)
Forward voltage VF (V)
Ta = 25°C
0
20 6040
10
−1
1
10
2
10
10
3
MA27P12_ IR - V
R
Reverse current I
R
(pA)
Reverse voltage VR (V)
Ta = 25°C
0
4 8 12 2016
0
0.1
0.2
0.3
0.5
0.4
MA27P12_ Ct - V
R
Terminal capacitance C
t
(pF)
Reverse voltage VR (V)
f = 1 MHz
Ta = 25°C
10
−2
10
−1
1 10
10
−1
1
10
10
2
10
3
MA27P12_ rf-I
F
f = 100 MHz
OSC level = 0 dBm
Ta = 25°C
Forward dynamic resistance r
f
(
Ω
)
Forward current IF (mA)
MA27P120G
IF VF IR VR Ct V
rf I
F
R
2 SKL00027AED SKL00027AED
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