This product complies with the RoHS Directive (EU 2002/95/EC).
PIN diodes
MA27P110G
Silicon epitaxial planar type
For high frequency switch
■ Features
• Low terminal capacitance
• Low forward dynamic resistance
• SSS-Mini type 2-pin package
■ Package
•
Code
SSSMini2-F3
•
Pin Name
1: Anode
2: Cathode
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Forward current I
Power dissipation
Junction temperature T
Storage temperature T
Note)*: With a glass epoxy PC board.
*
R
F
P
D
j
stg
60 V
50 mA
150 mW
150 °C
−55 to +150 °C
■ Marking Symbol: F
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
Terminal capacitance C
Forward dynamic resistance r
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
F1
V
F2
R
f1
r
f2
IF = 1 mA 0.76 0.85 V
IF = 10 mA 0.85 1.00 V
VR = 60 V 1.0 1 00 nA
VR = 0 V, f = 1 MHz 0.55 0.80 pF
t
IF = 1 mA, f = 100 MHz 1.6 3 .0 Ω
IF = 10 mA, f = 100 MHz 0.9 1 .5 Ω
Publication date: October 2007 SKL00026AED
1
MA27P110G
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
F
10
10
10
(mA)
F
−1
10
3
2
1
Forward current I
−2
10
−3
10
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V)
rf I
3
10
(Ω)
f
2
10
10
F
= 25°C
T
a
Ta = 25°C
f = 100 MHz
IR V
10
1
(nA)
R
−1
10
−2
10
Reverse current I
−3
10
−4
10
0 102030405060
R
T
a
Reverse voltage VR (V)
= 25°C
Ct V
R
0.6
(pF)
t
0.4
0.2
Terminal capacitance C
0
0 5 10 15 20 25
Reverse voltage VR (V)
= 25°C
T
a
f = 1 MHz
1
Forward dynamic resistance r
−1
10
−2
10
−1
10
Forward current IF (mA)
110
2
SKL00026AED