This product complies with the RoHS Directive (EU 2002/95/EC).
PIN Diodes
MA27P070G
Silicon planar type
For high frequency switch
■ Features
• Low terminal capacitance: Ct ≤ 0.35 pF
• Low forward dynamic resistance: r
≤ 1.5 Ω
f
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Forward current I
Power dissipation
Junction temperature T
Storage temperature T
Note)*: With a glass epoxy PC board.
*
R
F
P
D
j
−55 to +150 °C
stg
100 mA
150 mW
150 °C
60 V
■ Package
•
Code
SSSMini2-F3
•
Pin Name
1: Anode
2: Cathode
■ Marking Symbol: K
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
Terminal capacitance C
Forward dynamic resistance r
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
R
IF = 10 mA 1.0 V
F
VR = 60 V 100 nA
VR = 1 V, f = 1 MHz 0.35 pF
t
IF = 10 mA, f = 100 MHz 1.5 Ω
f
Publication date: October 2007 SKL00025AED
1
MA27P070G
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
10
10
10
(mA)
F
10
3
2
1
−1
F
Forward current I
−2
10
−3
10
0 0.4 0.60.2 0.8 1.0 1.2
Forward voltage VF (V)
rf I
3
10
(Ω)
2
f
10
10
F
= 25°C
T
a
Ta = 25°C
f = 100 MHz
IR V
10
10
(nA)
R
10
−1
−2
−3
R
T
a
Reverse current I
−4
10
0 102030405060
Reverse voltage VR (V)
= 25°C
0.5
Ct V
0.4
(pF)
t
0.3
0.2
Terminal capacitance C
0.1
0
0102030 5040
Reverse voltage VR (V)
R
= 25°C
T
a
f = 1 MHz
1
Forward dynamic resistance r
−1
10
−2
10
−1
10
Forward current IF (mA)
110
2
SKL00025AED