Panasonic MA27P07 User Manual

PIN Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MA27P07
Silicon planar type
For high frequency switch
Features
0.27
1
+0.05 –0.02
0.12
+0.05 –0.02
Unit: mm
Low terminal capacitance: Ct 0.35 pF
±0.05
±0.05
±0.05
1.40
1.00
0.15 min.
0 to 0.01
5°
±0.03
0.52
1: Anode 2: Cathode
SSSMini2-F2 Package
Low forward dynamic resistance: r
1.5
f
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Forward current I
Power dissipation P
Junction temperature T
Storage temperature T
R
F
D
j
55 to +150 °C
stg
100 mA
150 mW
150 °C
60 V
2
0.60
5°
Marking Symbol: K
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
R
Terminal capacitance C
Forward dynamic resistance r
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
IF = 10 mA 1.0 V
F
VR = 60 V 100 nA
VR = 1 V, f = 1 MHz 0.35 pF
t
IF = 10 mA, f = 100 MHz 1.5
f
0.15 min.0.15 max.
Publication date: September 2003 SKL00016AED
1
MA27P07
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
10
10
10
(mA)
F
10
3
2
1
1
F
Forward current I
2
10
3
10
0 0.4 0.60.2 0.8 1.0 1.2
Forward voltage VF (V)
rf I
3
10
()
2
f
10
10
F
= 25°C
T
a
Ta = 25°C f = 100 MHz
IR V
10
10
(nA)
R
10
1
2
3
R
T
a
Reverse current I
4
10
0 102030405060
Reverse voltage VR (V)
= 25°C
0.5
Ct V
0.4
(pF)
t
0.3
0.2
Terminal capacitance C
0.1
0
0102030 5040
Reverse voltage VR (V)
R
= 25°C
T
a
f = 1 MHz
1
Forward dynamic resistance r
1
10
2
10
1
10
Forward current IF (mA)
110
2
SKL00016AED
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