Panasonic MA27P020G User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).
PIN diodes
MA27P020G
Silicon epitaxial planar type
For high frequency switch
Features
Small forward dynamic resistance r
Ultraminiature package and surface mounting type
1.0 mm × 0.6 mm (height: 0.52 mm)
t
f
Package
Code SSSMini2-F3
Pin Name
1: Anode 2: Cathode
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Forward current I
Power dissipation
Junction temperature T
Storage temperature T
Note)*: With a glass epoxy PC board
*
R
F
P
D
j
55 to +150 °C
stg
100 mA
150 mW
150 °C
60 V
Marking Symbol: Y
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
Terminal capacitance C
Forward dynamic resistance
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. *:rf measurement device ; agilent model 4291B
*
F
R
r
f
IF = 10 mA 1.0 V
VR = 60 V 100 nA
VR = 1 V, f = 1 MHz 0.5 pF
t
IF = 10 mA, f = 100 MHz 2.0
Publication date: October 2007 SKL00023AED
1
MA27P020G
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
100°C
rf I
F
F
3
10
2
10
)
mA (
F
10
Ta = 150°C
1
Forward current I
1
10
2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V
3
10
)
(
f
2
10
10
20°C
25°C
)
f = 100 MHz
= 25°C
T
a
3
10
2
10
100°C
)
10
nA (
R
1
1
10
2
10
Reverse current I
3
10
4
10
25°C
020 6040
Reverse voltage VR
IR V
R
Ta = 150°C
(V)
Ct V
1.0
)
0.8
pF (
t
0.6
0.4
Terminal capacitance C
0.2
0
0
10 20 30
Reverse voltage VR (V
R
f = 1 MHz
= 25°C
T
a
)
1
Forward dynamic resistance r
1
10
2
10
1
10
Forward current IF (mA
110
)
2
SKL00023AED
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