Panasonic MA27P01 User Manual
PIN diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MA27P01
Silicon epitaxial planar type
For high frequency switch
■ Features
• Small terminal capacitance C
• Small forward dynamic resistance r
• Ultraminiature package and surface mounting type
1.0 mm × 0.6 mm (height: 0.52 mm)
t
f
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Forward current I
Power dissipation
*
Junction temperature T
Storage temperature T
Note)*: With a glass epoxy PC board
R
F
P
D
j
stg
60 V
100 mA
150 mW
150 °C
−55 to +150 °C
+0.05
0.27
–0.02
2
±0.05
±0.05
1.40
1.00
1
0.60
±0.05
5°
0.15 min.
0 to 0.01
Marking Symbol: N
+0.05
0.13
–0.02
5°
±0.03
0.52
SSSMini2-F2 Package
Unit: mm
0.15 min.0.15 max.
1: Anode
2: Cathode
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
F
R
Terminal capacitance C
Forward dynamic resistance
*
r
f
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. *:rf measurement device ; agilent model 4291B
Publication date: March 2004 SKL00007BED
IF = 10 mA 1.0 V
VR = 60 V 100 nA
VR = 1 V, f = 1 MHz 0.8 pF
t
IF = 10 mA, f = 100 MHz 1.0 Ω
1
MA27P01
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
rf I
F
F
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
100°C
Ta = 150°C
Forward voltage VF (V
3
10
)
Ω
(
f
2
10
10
−20°C
25°C
)
f = 100 MHz
= 25°C
T
a
3
10
Ta = 150°C
2
10
)
10
nA
(
R
1
−1
10
−2
10
Reverse current I
−3
10
−4
10
25°C
020 6040
Reverse voltage VR
IR V
100°C
R
1.0
)
0.8
pF
(
t
0.6
0.4
Terminal capacitance C
0.2
0
0
(V)
Ct V
R
f = 1 MHz
T
20 40 60
Reverse voltage VR (V
= 25°C
a
)
1
Forward dynamic resistance r
−1
10
−2
10
−1
10
Forward current IF (mA
110
)
2
SKL00007BED
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