Panasonic MA27E02 User Manual
Schottky Barrier Diodes (SBD)
This product complies with the RoHS Directive (EU 2002/95/EC).
MA27E02
Silicon epitaxial planar type
For cellular phone
■ Features
• High-frequency wave detection is possible.
• Low forward voltage V
• Small terminal capacitance C
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Maximum peak reverse voltage V
Forward current I
Peak forward current I
Junction temperature T
Storage temperature T
F
t
R
RM
F
FM
j
stg
100 mA
125 °C
−55 to +125 °C
20 V
20 V
35 mA
+0.05
0.27
–0.02
2
1.40±0.05
1.00±0.05
1
0.60±0.05
5°
0.15 min.
0 to 0.01
Marking Symbol: G
+0.05
0.13
–0.02
5°
0.52±0.03
SSSMini2-F2 Package
Unit: mm
0.15 min.0.15 max.
1: Anode
2: Cathode
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
F1
V
F2
R
Terminal capacitance C
Forward dynamic resistance r
f
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Rated input/output frequency: 2 GHz
IF = 1 mA 0.40 V
IF = 35 mA 1.0 V
VR = 15 V 200 nA
VR = 0 V, f = 1 MHz 1.2 pF
t
IF = 5 mA 9 Ω
Publication date: November 2003 SKH00129AED
1
MA27E02
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
2
10
Ta = 125°C
10
)
75°C
mA
(
F
1
−1
10
Forward current I
−2
10
−3
10
0 0.2 0.4 0.6 0.8 1.0
F
25°C
−20°C
Forward voltage VF (V
IR V
3
10
2
10
)
A
10
(µ
R
1
−1
10
Reverse current I
−2
10
−3
10
0 5 10 15 20 25
)
Reverse voltage VR (V
R
Ta = 125°C
75°C
25°C
1.2
1.0
)
pF
(
t
0.8
0.6
0.4
Terminal capacitance C
0.2
0
0 5 10 15 20 25
)
Ct V
R
T
a
Reverse voltage VR (V
= 25°C
)
2
SKH00129AED
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