Panasonic MA27D29 User Manual

Schottky Barrier Diodes (SBD)
This product complies with the RoHS Directive (EU 2002/95/EC).
MA27D29
Silicon epitaxial planar type
For super high speed switching
Features
Low forward voltage: VF < 0.42 V (at IF = 100 mA)
Optimum for high frequency rectification because of its short
reverse recovery time t
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Repetitive peak reverse voltage V
Forward current (Average) I
Peak forward current I
Non-repetitive peak forward I
surge current
Junction temperature T
Storage temperature T
Note)* :
*
The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
.
rr
R
RRM
F(AV)
FM
FSM
j
stg
30 V
30 V
100 mA
200 mA
1A
125 °C
55 to +125 °C
+0.05
0.27
–0.02
1
1.40±0.05
1.00±0.05
2
0.60±0.05
5°
0.20±0.05
0 to 0.01
Marking Symbol: 8M
+0.05
0.12
–0.02
5°
0.52±0.03
SSSMini2-F2 Package
Unit: mm
±0.050.15 max.
0.20
1: Anode 2: Cathode
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
F1
V
F2
R1
I
R2
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz
4.*: trr measurement circuit
Bias Application Unit (N-50BU)
Pulse Generator (PG-10N)
= 50
R
s
A
IF = 10 mA 0.25 0.29 V
IF = 100 mA 0.39 0.42 V
VR = 10 V 25 µA
VR = 30 V 120 µA
VR = 0 V, f = 1 MHz 11 pF
t
IF = IR = 100 mA 1 ns
Irr = 10 mA, RL = 100
Input Pulse Output Pulse
t
t
p
Wave Form Analyzer (SAS-8130)
= 50
R
i
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
= 100 mA
I
F
= 100 mA
I
R
= 100
R
L
t
rr
I
= 10 mA
rr
t
Publication date: January 2004 SKH00128BED
1
MA27D29
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
10
10
10
(mA)
F
1
10
3
2
= 125°C
T
a
75°C
1
25°C
25°C
Forward current I
2
10
3
10
0 0.1 0.2 0.3 0.4 0.5 0.6
Forward voltage VF (V)
IR V
3
10
2
10
(µA)
R
10
Reverse current I
1
0 5 10 252015 30
R
Reverse voltage VR (V)
T
a
= 125°C
75°C
25°C
Ct V
25
20
(pF)
t
15
10
Terminal capacitance C
5
1
0 5 10 15 20 25 30
R
Reverse voltage VR (V)
T
= 25°C
a
2
SKH00128BED
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