Panasonic MA27D270G, SKH00165AED User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Schottky Barrier Diodes (SBD)

MA27D270G

Silicon epitaxial planar type

For super high speed switching

■ Features

• Small reverse current I

• Optimum for high frequency rectification because of its short

reverse recovery time t

• SSS-Mini type 2-pin package

R

rr

■ Package

•

Code
SSSMini2-F3

•

Pin Name

1: Anode
2: Cathode

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage V

Repetitive peak reverse voltage V

Peak forward current I

Forward current (Average) I

Non-repetitive peak forward I

surge current

*

Junction temperature T

Storage temperature T

R

RRM

FM

F(AV)

FSM

j

stg

Note)*: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)

20 V

20 V

200 mA

100 mA

1A

150 °C

−55 to +150 °C

■ Marking Symbol: 8L

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Reverse current I

Forward voltage V

R

F1

V

F2

Terminal capacitance C

Reverse recovery time

*

t

rr

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body

and the leakage of current from the operating equipment.

3. Rated input/output frequency: 250 MHz

4.* : trr measurement circuit

Bias Application Unit (N-50BU)

Pulse Generator
(PG-10N)

= 50 Ω

R

s

A

VR = 10 V 0.3 µA

IF = 10 mA 0.38 0.44 V

IF = 100 mA 0.54 0.58

VR = 0 V, f = 1 MHz 11 pF

t

IF = IR = 10 mA 1 ns
Irr = 10 mA, RL = 100 Ω

Input Pulse Output Pulse

t

t

p

Wave Form
Analyzer
(SAS-8130)

= 50 Ω

R

i

r

10%

90%

V

R

t

= 2 µs

p

= 0.35 ns

t

r

δ = 0.05

t

I

F

= IR = 10 mA

I

F

R

L

t

rr

I

rr

= 100 Ω

= 10 mA

t

Publication date: October 2007 SKH00165AED

1

MA27D270G

This product complies with the RoHS Directive (EU 2002/95/EC).

T

a

IF  V

= 150°C

10

10

10

(mA)

F

−1

10

3

2

1

Forward current I

−2

10

−3

10

0 0.2 0.4 0.6

Forward voltage VF (V)

I

T

= 125

j

F(AV)

°C

)

A

(m

140

120

100

F(AV)

80

60

−20°C

 T

I

F

F

125°C

75°C
25°C

a

t

p

T

IR  V

3

10

= 150°C

T

a

2

10

(µA)

R

10

Reverse current I

10

10

125°C

10

75°C

1

−1

25°C

−2

−3

0 5 10 15 20 25

R

Reverse voltage VR (V)

Ct  V

R

12

(pF)

t

8

4

Terminal capacitance C

0

0 5 10 15 20 25

Reverse voltage VR (V)

T

= 25°C

a

40

20

Forward current (Average) I

0

0DC40 16012080

Ambient temperature Ta (°C

)

2

SKH00165AED