Switching Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MA27111
Silicon epitaxial planar type
For high-speed switching circuits
■ Features
•
High-density mounting is possible
•
Short reverse recovery time t
•
Small terminal capacitance C
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Maximum peak reverse voltage V
Forward current I
Peak forward current I
Non-repetitive peak forward I
surge current
Junction temperature T
Storage temperature T
Note)*: t = 1 s
*
rr
t
R
RM
F
FM
FSM
j
stg
80 V
80 V
100 mA
225 mA
500 mA
150 °C
−55 to +150 °C
+0.05
0.27
–0.02
2
1.40±0.05
1.00±0.05
1
0.60±0.05
5°
0.15 min.
0 to 0.01
Marking Symbol: S
+0.05
0.13
–0.02
5°
0.52±0.03
SSSMini2-F2 Package
Unit: mm
0.15 min.0.15 max.
1: Anode
2: Cathode
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
voltage V
Reverse
Reverse current I
F
R
R
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 10 MHz.
3.*: trr measurement circuit
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: November 2003 SKF00066BED
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
IF = 100 mA 0.95 1.20 V
IR = 100 µA80
VR = 75 V 100 nA
VR = 0 V, f = 1 MHz 0.6 2.0 pF
t
IF = 10 mA, VR = 6 V 3 ns
Irr = 0.1 IR , RL = 100 Ω
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
I
= 10 mA
F
= 6 V
V
R
= 100 Ω
R
L
t
rr
I
= 0.1 I
rr
t
R
1
MA27111
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
C
= 150°
T
a
C
100°
C
25°
C
−20°
0 0.2 0.4 0.6 0.8 1.0 1.2
F
Forward voltage VF (V
IR T
V
R
a
= 75 V
)
nA
(
5
10
4
10
R
3
10
2
10
Reverse current I
10
35 V
6 V
IR V
Ct V
R
R
= 150°
T
a
100°
C
25°
f = 1 MHz
= 25°
T
a
1.6
C
)
1.2
V
(
C
F
0.8
Forward voltage V
0.4
0
−40 0 40 80 120 160 200
)
3
10
C
)
A
(
10
F(surge)
2
10
1
Forward surge current I
5
10
4
10
)
nA
(
R
3
10
2
10
Reverse current I
10
1
)
0 20 40 60 80 100 120
Reverse voltage VR (V
1.2
1.0
)
pF
(
t
0.8
0.6
0.4
Terminal capacitance C
0.2
VF T
a
= 100 mA
I
F
10 mA
3 mA
Ambient temperature Ta (°C
I
t
F(surge)
W
= 25°
T
a
I
F(surge)
t
W
Non repetitive
)
C
1
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
2
0
)
0 20406080100120
Reverse voltage VR (V
)
−1
10
−1
Pulse width tW (ms
10110
)
SKF00066BED