Band Switching Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MA27077
Silicon epitaxial planar type
For band switching
■ Features
• Low forward dynamic resistance r
• Less voltage dependence of diode capacitance C
• SSS-Mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
f
D
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Forward current I
Operating ambient temperature
Storage temperature T
R
F
*
T
opr
stg
Note)*: Maximum ambient temperature during operation.
35 V
100 mA
−25 to +85 °C
−55 to +125 °C
+0.05
0.27
–0.02
2
±0.05
±0.05
1.40
1.00
1
0.60
±0.05
5˚
0.15 min.
0 to 0.01
Marking Symbol: C
Unit: mm
+0.05
0.10
–0.02
5˚
±0.03
0.52
1: Anode
SSSMini2-F1 Package
2: Cathode
0.15 min.0.15 max.
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
Diode capacitance C
Forward dynamic resistance
*
F
R
D
r
f
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3.*: Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER
IF = 100 mA 0.92 1.00 V
VR = 33 V 0.01 100.00 nA
VR = 6 V, f = 1 MHz 0.9 1.2 pF
IF = 2 mA, f = 100 MHz 0.65 0.85 Ω
Publication date: March 2004 SKG00001BED
1
MA27077
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
120
100
)
mA
(
80
F
= 60°C
T
60
40
a
Forward current I
20
0
0 0.4 0.8 1.2
Forward voltage VF (V
IR T
10
)
nA
(
R
1
F
a
25°C
V
−40°C
)
= 33 V
R
10
CD V
)
pF
(
D
1
R
Diode capacitance C
−1
10
0 102030
Reverse voltage VR (V
f = 1 MHz
= 25°C
T
a
)
CD T
f = 1 MHz
1.020
1.014
)
)
a
1.008
T
(
= 25°C
a
D
T
C
(
D
1.002
C
0.996
0.990
0 20 40 60 80 100
VR = 6 V
Ambient temperature Ta (°C
a
)
Reverse current I
−1
10
0 40 80 120
Ambient temperature Ta
(°C)
2
SKG00001BED