Panasonic MA24D51 User Manual
Schottky Barrier Diodes (SBD)
Publication date: September 2006 SKH00154AED
This product complies with the RoHS Directive (EU 2002/95/EC).
Features
Allowing low-profi le mounting
Forward current (Average) I
F(AV)
= 3 A rectifi cation is possible
Low forward voltage V
Absolute Maximum Ratings
a
= 25
= 25
Reverse voltage
V
R
40
V
Maximum peak reverse voltage
V
RM
40
V
Forward current (Average)
F(AV)
Non-repetitive peak forward surge current
2
I
FSM
A
Junction temperature
j
–40 to +150
Note)
2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics
T
a
= 25
= 25
±
Typ
Forward voltage
V
= 3.0 A
V
Reverse current
V
= 40 V
= 40 V
Thermal resistance (j-a)
R
th(j-a)
Thermal resistance (j-l)
R
th(j-l)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3.
Unit: mm
1: Anode
2: Cathode TMiniP2-F1 Package
2.40
±0.10
0.15
±0.05
1
2
1.75±0.05
4.70
±0.10
3.80±0.050.450±0.05
5°
0 to 0.40
0 to 0.03
0.90MAX
5°
2
SKH00154AED
This product complies with the RoHS Directive (EU 2002/95/EC).
I
F VF
I
R VR
C
C
t
V
R
10
−6
0 0.2 0.4 0.6 0.8 1.0
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
2
10
Forward voltage V
F
(V)
Forward current I
F
(A)
MA24D51_IF-VF
T
a
= 150°C
25°C
−20°C
75°C
125°C
0 5 10 3530252015 40
10
2
10
5
10
3
10
4
1
10
Reverse voltage VR (V)
Reverse current I
R
(µA)
MA24D51_IR-VR
T
a
= 75°C
−20°C
25°C
1
300
400
500
200
100
600
0
5
10 15 20 25 4030 35
Reverse voltage VR (V)
Terminal capacitance C
t
(pF)
MA24D51_Ct-VR
T
a
= 25°C
f = 1 MHz
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