Panasonic MA21D340G User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Bias Application Unit (N-50BU)

90%

Pulse Generator
(PG-10N)
Rs = 50 Ω

Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω

tp = 2 µs
tr = 0.35 ns
δ = 0.05

IF = IR = 100 mA
RL = 100 Ω

10%

Input Pulse Output Pulse

I

rr

= 10 mA

t

r

t

p

t

rr

V

R

I

F

t

t

A

Schottky Barrier Diodes (SBD)

MA21D340G

Silicon epitaxial planar type

For rectification

 Features

 Forward current (Average) I
 Low forward voltage V

F

= 1.0 A rectification is possible

F(AV)

 Package

Code

SMini2-F2

Pin Name

 Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage V

Maximum peak reverse voltage V

Forward current (Average) I

Non-repetitive peak forward surge current

*

Junction temperature T

Storage temperature T

Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)

RM

F(AV)

I

FSM

stg

R

j

–55 to +150

30 V

30 V

1.0 A

20 A

150

°C

°C

1: Anode

2: Cathode

 Marking Symbol: 4V

 Electrical Characteristics Ta = 25°C±3°C

Parameter Symbol Conditions Min Typ Max Unit

Forward voltage

V

V

Reverse current I

Terminal capacitance C

Reverse recovery time

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage

of current from the operating equipment.

3. *: trr measurement circuit

*

t

rr

IF = 0.7 A 0.33 0.36

F1

IF = 1.0 A 0.35 0.38

F2

VR = 30 V 1 200

R

VR = 10 V, f = 1 MHz 45 pF

t

IF = IR = 100 mA, Irr = 10 mA,

RL = 100 W

14 ns

V

mA

Publication date: August 2008 SKH00161CED 1

This product complies with the RoHS Directive (EU 2002/95/EC).

10

−2

0 0.4 0.8 1.2

10

−1

1

10

10

5

10

4

10

3

10

2

Forward voltage VF (V)

MA21D34_IF-VF

Forward current I

F

(mA)

Ta = 150°C

75°C

25°C

−20°C

0 5 10 15 20 25 30

Reverse voltage VR (V)

Reverse current I

R

(mA)

10

−3

10

−2

10

−1

1

10

3

10

2

10

T

a

= 150°C

75°C

25°C

MA21D34_IR-VR

0

100

50

200

150

250

300

0 10 20 30

Reverse voltage VR (V)

Terminal capacitance C

t

(pF)

MA21D34_Ct-VR

0

10

20

30

0 10 20 30 40

Reverse voltage VR (V)

Reverse power dissipation (Average) P

R(AV)

(W)

MA21D34_PR(AV)-VR

DC

0.9

0.8

0.5

I

F

t

p

T

0

0.2

0.4

0.6

0 0.4 0.8 1.2 1.6

Forward current (Average) I

F(AV)

(A)

Forward power dissipation (Average) P

F(AV)

(W)

MA21D34_PF(AV)-IF(AV)

DC

0.5

0.2

0.1

I

F

t

p

T

0

0.2

0.4

0.6

1.4

1.2

1.0

0.8

0 40

200160120

80

Ambient temperature Ta

(°C)

Forward current (Average) I

F(AV)

(

A

)

T

j

= 150°C

V

R

= 0 V
Alumina PC board
Cu hoil 2 mm × 2 mm

tp / T

DC

0.5

0.2

0.1

t

p

T

I

F

10

−1

10

−3

110

−1

10

−2

10 10210

3

1

10

10

3

10

2

Time t (s)

MA21D34_Rth-t

Thermal resistance R

th

(°C/W)

Ta = 25°C

1. Glass Epoxy PC board

2. Alumina PC board
Cu hoil 2 mm × 2 mm

1

2

0

0.2

0.4

0.6

1.4

1.2

1.0

0.8

0 40

200160120

80

T

j

= 150°C

V

R

= 0 V

tp / T

DC

0.5

0.2

0.1

Lead temperature Tl

(°C)

Forward current (Average) I

F(AV)

(

A

)

MA21D34_I

F(AV)-Tl

t

p

T

I

F

MA21D340G

IF  VF IR  VR Ct  V

P

 VR P

R(AV)

F(AV)

 I

I

F(AV)

F(AV)

 T

R

a

Rth  t I

2 SKH00161CED

 T

F(AV)

1