Panasonic MA3X199, MA199 User Manual

Switching Diodes

This product complies with the RoHS Directive (EU 2002/95/EC).

MA3X199 (MA199)

Silicon epitaxial planar type

For high voltage switching circuit

■ Features

• High breakdown voltage: VR = 200 V

• Short reverse recovery time t

• Automatic mounting is possible

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage V

Repetitive peak reverse voltage

Forward current (Average) I

Repetitive peak forward current

Non-repetitive peak forward I

surge current

Junction temperature T

Storage temperature T

Note)*:t = 1 s

*

rr

200 V

250 V

100 mA

225 mA

500 mA

150 °C

−55 to +150 °C

V

F(AV)

I

R

RRM

FRM

FSM

j

stg

Unit: mm

+0.10

0.40

10˚

3

1

(0.95) (0.95)

1.9

±0.1

+0.20

2.90

–0.05

–0.05

+0.25

–0.05

+0.2

–0.3

2.8

1.50

2

(0.65)

+0.2

–0.1

+0.3

–0.1

1.1

1.1

0 to 0.1

5˚

0.16

+0.10
–0.06

1: Anode
2: N.C.
3: Cathode

EIAJ: SC-59 Mini3-G1 Package

Marking Symbol: M3A

Internal Connection

3

0.4±0.2

1

2

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Forward voltage V

Reverse current I

R

Terminal capacitance C

Reverse recovery time

*

t

rr

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. Absolute frequency of input and output is 20 MHz.

3.*: trr measurement circuit

Bias Application Unit (N-50BU)

A

Pulse Generator
(PG-10N)
Rs = 50 Ω

Publication date: March 2004 SKF00042CED

Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω

IF = 100 mA 1.2 V

F

VR = 200 V 1.0 µA

VR = 0 V, f = 1 MHz 3.0 pF

t

IF = IR = 10 mA 60 ns

Irr = 1 mA, RL = 100 Ω

Input Pulse Output Pulse

t

t

p

r

10%

90%

V

R

= 2 µs

t

p

= 0.35 ns

t

r

δ = 0.05

t

t

I

= 10 mA

F

= 10 mA

I

R

= 100 Ω

R

L

rr

I

= 1mA

rr

I

F

Note) The part number in the parenthesis shows conventional part number.

t

1

MA3X199

This product complies with the RoHS Directive (EU 2002/95/EC).

IF  V

2

10

10

)

mA
(

F

1

−1

10

Forward current I

−2

10

−3

10

0 0.2 0.4 0.6 0.8 1.0 1.2

F

Forward voltage VF (V

 T

2

10

10

)
µA

(

R

1

−1

10

Ta = 150°C

a

100°C

25°C

− 20°C

)

IR  V

2

10

10

)
µA

(

R

1

−1

10

Reverse current I

−2

10

−3

10

0 40 80 120 160 200 240

R

Reverse voltage VR (V

Ct  V

1.6

)
pF

1.2

(

t

0.8

R IR

Ta = 150°C

100°C

75°C

25°C

)

f = 1 MHz

= 25°C

T

a

1.2

VF  T

1.0

)

V

(

0.8

F

0.6

0.4

Forward voltage V

0.2

0

−40 0 40 80 120 160

Ambient temperature Ta (°C

a

IF = 100 mA

10 mA

3 mA

)

Reverse current I

VR = 200 V

−2

10

10

100 V

10 V

−3

−40 0 40 80 120 160

Ambient temperature Ta (°C

0.4

Terminal capacitance C

0

0 40 80 120 160 200 240

)

Reverse voltage VR (V

)

2

SKF00042CED