Panasonic AN6535 Datasheet
AN6535
4-pin Negative Adjustable Voltage Regulator
■ Overview
The AN6535 is a monolithic 4-pin negative adjustable
voltage regulator. With an external resistor, it provides
any stabilized output v oltages between –5V and–30V , and
is optimum for the power circuits with a current capacitance of up to 0.5A. W ith various protective circuits built
in, it has high reliability and is provided in a 4-lead SIL
plastic package.
■ Features
• Wide range of output voltages:VO= –5 to –30V
• Interal thermal overload protection
• Interal short-circuit protection
• Output transistor safe area compensation
+ 0.5
9.6
– 0.1
ø 3.1
4.0
12.5max.
3–1.0
1.8
4-pin SIL Plastic Package with Fin (SSIP004-P-0000)
2.0
9.0min.
0.7±0.2 0.5±0.1
2.3 1.5 1.32.32.3
3.3max.
Unit:mm
■ Block Diagram
Start
Circuit
Common
Ref.
Voltage
Thermal
Protection
1 2 3 4
Input Output
Error
Amp.
–
Short Circuit Protection
+
Output
Pass Tr.
Rsc
Control
■ Absolute Maximum Ratings (Ta=25˚C)
Parameter Symbol Rating Unit
Supply voltage
Supply current
Power dissipation
Operating ambient temperature
Storage
*
1 The internal circuit is provided with a current limiting circuit.
*
2 Maximum power dissipation value when there is no heat sink (The value varies depending on the external heat dissipation state)
V
ICC
T
T
CC
1
*
P
D
opr
stg
–40
1
7.5
–20 to +80
–55 to +150
V
A
W
˚C
˚C
■ Electrical Characteristics (Ta=25˚C)
Parameter Symbol Condition min typ max
–3V to VO–15V,
V
Output voltage tolerance
Line regulation
Load regulation
Bias current
Control pin current
Ripple rejection ratio
Output noise voltage
Minimum input/output voltage difference
Short-circuit current
Peak output current
Output voltage temperatrue coefficient
Control pin voltage
V
O
REG
REG
I
Bias
I
cont
RR
V
no
V
DIF (min.)
I
OS
I
OP
∆VO/Ta
V
cont
I=VO
=5 to 350mA, Tj=25˚C
I
O
=–5V, IO=200mA,
V
O
=–7.5 to –25V, Tj=25˚C
V
I
=–18V, IO=5mA,
V
O
IN
=–21 to –33V, Tj=25˚C
V
I
=–18V, IO=200mA,
V
O
=–21 to –25V, Tj=25˚C
V
I
IO=5 to 500mA
L
Tj=25˚C
=25˚C
T
j
=25˚C
T
j
V
=–8 to –18V, VO=–5V,
I
f=120Hz
=–5V, f=10Hz to 100kHz
V
O
=500mA, Tj=25˚C
I
O
VI=–35V, VO=–5V, Tj=25
=–5V, Tj=25˚C
V
O
=–5V
V
O
=5mA Tj=25 to 150˚C
I
O
Tj=25˚C
VO=–5V, VI=–12V
VO=–18V, VI=–25V
˚C
Tj=–20 to +25
˚C
0.4
–3.12
1.5
60
40
0.2
– 0.3
–2.88
Note 1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10 ms) so that
the drift in the characteristic value due to a temperature rise at chip junction can be ignored.
Note 2) Unless otherwise specified, VI=–10V, VO=–5V, IO=350mA, CI=2µF, and CO=1µF
Unit
4%
1
%
0.75 %
0.67
%
%1
3
mA
3
µA
dB
µV
V1.1
600
1.4
mA100
A0.8
mV/˚C
V–3
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