Panasonic 2SK374 User Manual

Silicon Junction FETs (Small Signal)

2SK374

Silicon N-Channel Junction FET

For low-frequency amplification

For switching

■ Features

●Low noise-figure (NF)

●High gate to drain voltage VGDO

●Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.

■ Absolute Maximum Ratings (Ta = 25°C)

Parameter	Symbol	Ratings	Unit
Drain to Source voltage	VDSX	55	V
Gate to Drain voltage	VGDO	−55	V
Gate to Source voltage	VGSO	−55	V
Drain current	ID	30	mA
Gate current	IG	10	mA
Allowable power dissipation	PD	200	mW
Channel temperature	Tch	150	°C
Storage temperature	Tstg	−55 to +150	°C

				+0.2		unit: mm
				2.8 –0.3
		0.65±0.15		+0.25	0.65±0.15
				1.5 –0.05
	2.9 –0.05	1.9±0.2	0.95 0.95	1
+0.2					3
					1.45	+0.1	–0.05
				2			0.4
	+0.2	1.1 –0.1	0.8			+0.1	0.16 –0.06
		0.1 to 0.3		0.1
			0.4±0.2
				0 to
1: Source					JEDEC: TO-236
2: Drain					EIAJ: SC-59
3: Gate				Mini Type Package (3-pin)

Marking Symbol (Example): 2B

■ Electrical Characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

min

typ

max

Unit

Drain to Source cut-off current

*

VDS = 10V, VGS = 0

1

20

mA

IDSS

Gate to Source leakage current

IGSS

VGS = −30V, VDS = 0

−10

nA

Gate to Drain voltage

VGDC

IG = −100µA, VDS = 0

−55

−80

V

Gate to Source cut-off voltage

VGSC

VDS = 10V, ID = 10µA

−5

V

Mutual conductance

gm

VDS = 10V, ID = 5mA, f = 1kHz

2.5

7.5

mS

Input capacitance (Common Source)

Ciss

VDS = 10V, VGS = 0, f = 1MHz

6.5

pF

Reverse transfer capacitance (Common Source)

Crss

1.9

pF

Noise figure

NF

VDS = 10V, VGS = 0, Rg = 100kΩ

2.5

dB

f = 100Hz

* IDSS rank classification

Runk

P

Q

R

S

IDSS (mA)

1 to 3

2 to 6.5

5 to 12

10 to 20

Marking Symbol

2BP

2BQ

2BR

2BS

1

Silicon Junction FETs (Small Signal)

2SK374

				PD Ta									ID VDS
	240										5
(mW)																Ta=25˚C
	200										4
D
										(mA)
P	160
powerAllowabledissipation										Draincurrent I	3
										D					VGS=0
	120															– 0.2V
											2					– 0.4V
	80
																– 0.6V
	40										1					– 0.8V
																–1.0V
	0										0
	0	20	40	60	80	100	120	140	160		0	0.1	0.2	0.3	0.4	0.5	0.6
		Ambient temperature					Ta	(˚C)			Drain to source voltage					VDS	(V)
				ID VGS									gm VGS

(mA)

D

Drain current I

Input capacitance (Common source) C (pF) iss

16

VDS=10V

14

12

10

8
Ta=–25˚C
25˚C
6
4
75˚C
2
0
0 – 0.2 – 0.4 – 0.6 – 0.8	–1.0	–1.2
Gate to source voltage	VGS	(V)

Ciss VDS

16

VGS=0 Ta=25˚C

14

12

10

8

6

4

2

0

0

2

4

6

8

10

12

Drain to source voltage VDS (V)

(mS)

Mutual conductance g m

Output capacitance (Common source) C (pF) oss

12
								VDS=10V
								Ta=25˚C
10
8
6
4
2
0
–2.0 –1.6 –1.2 – 0.8 – 0.4											0

Gate to source voltage VGS (V)

Coss VDS

8

VGS=0 Ta=25˚C

7

6

5

4

3

2

1

0

0

2

4

6

8

10

12

Drain to source voltage VDS (V)

ID VDS

10

Ta=25˚C

8

(mA)

V

GS

=0V

D

6

–

0.2V

I

current

4

– 0.4V

Drain

– 0.6V

2

–

0.8V

–1.0V

0

–1.2V

0

2

4

6

8

10

12

Drain to source voltage

VDS

(V)

gm ID

	12
											VDS=10V
											Ta=25˚C
(mS)	10
m	8
g
conductance
	6							IDSS=7.5mA
	4
Mutual	2
	0
	0		2		4				6		8				10
			Drain current						ID		(mA)

2