Panasonic 2SK3193 User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Power MOSFETs

2SK3193

Silicon N-channel power MOSFET

For switching

■ Features

•Avalanche energy capability guaranteed

•High-speed switching

•Low ON resistance Ron

•No secondary breakdown

■ Absolute Maximum Ratings TC = 25°C

Parameter		Symbol	Rating	Unit
Drain-source surrender voltage		VDSS	350	V
Gate-source surrender voltage		VGSS	±30	V
Drain current		ID	±20	A
Peak drain current		IDP	±80	A
Avalanche energy capability *		EAS	200	mJ
Power dissipation		PD	100	W
	Ta = 25°C		3
Channel temperature		Tch	150	°C
Storage temperature		Tstg	−55 to +150	°C

Note) *: L = 1 mH, IL = 20 A, 1 pulse, Ta = 25°C

■ Electrical Characteristics TC = 25°C ± 3°C

					Unit: mm
	(0.7)		15.0±0.3		5.0±0.2
			11.0±0.2		(3.2)
21.0±0.5				φ 3.2±0.1
	15.0±0.2
	(2.3)			2.0±0.2	2.0±0.1
16.2±0.5
	(3.2)	Solder Dip		1.1±0.1	0.6±0.2
				5.45±0.3
			10.9±0.5
		1	2	3	1: Gate
					2: Drain
					3: Source
					EIAJ: SC-92
					TOP-3F-B1 Package

Marking Symbol: K3193

Internal Connection

D

G

S

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Drain-source surrender voltage	VDSS	ID = 1 mA, VGS = 0	350			V
Drain-source cutoff current	IDSS	VDS = 280 V, VGS = 0			10	µA
Gate-source cutoff current	IGSS	VGS = ±30 V, VDS = 0			±1	µA
Gate threshold voltage	Vth	VDS = 10 V, ID = 1 mA	2		4	V
Drain-source ON resistance	RDS(on)	VGS = 10 V, ID = 10 A		120	150	mΩ
Forward transfer admittance	Yfs	VDS = 10 V, ID = 10 A	6	12		S
Short-circuit forward transfer capacitance	Ciss	VDS = 10 V, VGS = 0, f = 1 MHz		3 900		pF
(Common source)
Short-circuit output capacitance	Coss			1 340		pF
(Common source)
Reverse transfer capacitance	Crss			560		pF
(Common source)
Turn-on delay time	td(on)	VDD = 150 V, ID = 10 A		40		ns
Rise time	tr	RL = 15 Ω, VGS = 10 V		75		ns
Turn-off delay time	td(off)			340		ns
Fall time	tf			95		ns

Publication date: November 2004

SJG00039AED

1

This product complies with the RoHS Directive (EU 2002/95/EC).

2SK3193

■ Electrical Characteristics (continued)			TC = 25°C ± 3°C
Parameter	Symbol		Conditions	Min	Typ	Max	Unit
Diode forward voltage	VDSF		IDR = 20 A, VGS = 0			−1.4	V
Reverse recovery time	trr		L = 230 µH, VDD = 100 V		260		ns
Reverse recovery charge	Qrr		IDR = 10 A, di/dt = 100 A/µs		1.8		µC
Gate charge load	Qg		VDD = 100 V, ID = 10 A		90		nC
			VGS = 10 V
Gate-source charge	Qgs				10		nC
Gate-drain charge	Qgd				30		nC
Thermal resistance (ch-c)	Rth(ch-c)					1.25	°C/W
Thermal resistance (ch-a)	Rth(ch-a)					41.7	°C/W

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Safe operation area

	103			Non repetitive pulse		120
				TC = 25°C
				t = 100 s		100
	10	2	IDP		)
)					W
A					(	80
(					D
D			ID		P
Drain current I					Power dissipation
	10					60
			1 ms
			10 ms			40
	1
				100 ms
				DC		20
	10−1		10	102	103	0
		1
			Drain-source voltage VDS (V)

	PD Ta
		(1) TC = Ta
		(2) Without heat sink
(1)		PD = 3 W
(2)
0	50	100	150
Ambient temperature Ta			(°C)

2	SJG00039AED