Panasonic 2SK3193 User Manual

Power MOSFETs

This product complies with the RoHS Directive (EU 2002/95/EC).

2SK3193

Silicon N-channel power MOSFET

For switching

■ Features

• Avalanche energy capability guaranteed

• High-speed switching

• Low ON resistance R

• No secondary breakdown

■ Absolute Maximum Ratings TC = 25°C

Parameter Symbol Rating Unit

Drain-source surrender voltage V

Gate-source surrender voltage V

Drain current I

Peak drain current I

Avalanche energy capability

Power dissipation P

Channel temperature T

Storage temperature T

Note)*:L = 1 mH, IL = 20 A, 1 pulse, Ta = 25°C

on

DSS

GSS

D

DP

*

EAS 200 mJ

D

350 V

±30 V
±20 A
±80 A

100 W

Ta = 25°C3

ch

stg

150 °C

−55 to +150 °C

15.0±0.3

11.0±0.2

(0.7)

φ 3.2±0.1

±0.2

21.0±0.516.2±0.5

15.0

(2.3)

(3.2)

Solder Dip

10.9±0.5

123

2.0±0.2

1.1±0.1

5.45±0.3

Marking Symbol: K3193

Internal Connection

G

Unit: mm

5.0±0.2

(3.2)

2.0±0.1

0.6±0.2

1: Gate
2: Drain
3: Source

EIAJ: SC-92

TOP-3F-B1 Package

D

■ Electrical Characteristics TC = 25°C ± 3°C

S

Parameter Symbol Conditions Min Typ Max Unit

Drain-source surrender voltage V

Drain-source cutoff current I

Gate-source cutoff current I

Gate threshold voltage V

Drain-source ON resistance R

DSSID

DSS

GSS

DS(on)VGS

= 1 mA, VGS = 0 350 V

VDS = 280 V, VGS = 010µA

VGS = ±30 V, VDS = 0 ±1 µA

VDS = 10 V, ID = 1 mA 2 4 V

th

= 10 V, ID = 10 A 120 150 mΩ

Forward transfer admittance Yfs VDS = 10 V, ID = 10 A 6 12 S

Short-circuit forward transfer capacitance C

VDS = 10 V, VGS = 0, f = 1 MHz 3 900 pF

iss

(Common source)

Short-circuit output capacitance C

oss

1 340 pF

(Common source)

Reverse transfer capacitance C

rss

560 pF

(Common source)

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Publication date: November 2004 SJG00039AED

VDD = 150 V, ID = 10 A 40 ns

d(on)

RL = 15 Ω, VGS = 10 V 75 ns

r

d(off)

f

340 ns

95 ns

1

2SK3193

This product complies with the RoHS Directive (EU 2002/95/EC).

■ Electrical Characteristics (continued) TC = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Diode forward voltage V

Reverse recovery time t

Reverse recovery charge Q

Gate charge load Q

Gate-source charge Q

Gate-drain charge Q

Thermal resistance (ch-c) R

Thermal resistance (ch-a) R

DSFIDR

rr

rr

g

gs

gd

th(ch-c)

th(ch-a)

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

= 20 A, VGS = 0 −1.4 V

L = 230 µH, VDD = 100 V 260 ns

IDR = 10 A, di/dt = 100 A/µs 1.8 µC

VDD = 100 V, ID = 10 A 90 nC

VGS = 10 V 10 nC

30 nC

1.25 °C/W

41.7 °C/W

Safe operation area PD  T

3

10

I

DP

2

10

)
A

(

D

I

D

10

Drain current I

1

−1

10

11010210

Drain-source voltage VDS (V

1 ms

10 ms

Non repetitive pulse
TC = 25°C

t = 100 µs

100 ms

DC

120

(1)

100

)

W

(

80

D

60

40

a

(1) TC = T

a

(2) Without heat sink

= 3 W

P

D

Power dissipation P

20

(2)

3

)

0

0 50 150100

Ambient temperature Ta (°C

)

2

SJG00039AED