Panasonic 2SK3124 Datasheet
Power F-MOS FETs
2SK3124
Silicon N-Channel Power F-MOS FET
■ Features
●Avalanche energy capacity guaranteed
●High-speed switching
●No secondary breakdown
●High electrostatic breakdown voltage
■ Applications
●High-speed switching (switching power supply)
●For high-frequency power amplification
■ Absolute Maximum Ratings (T
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC
Pulse
Avalanche energy capacity
Allowable power
dissipation
TC = 25°C
Ta = 25°C
Channel temperature
Storage temperature
*
L = 2mH, IL = 0.5A, 1 pulse
Symbol
V
V
I
D
I
DP
EAS
P
D
T
ch
T
stg
DSS
GSS
*
= 25°C)
C
Ratings
±0.5
0.25
−55 to +150
400
±20
150
±1
10
unit: mm
Unit
1.8±0.1
7.3±0.1
0.93±0.1
2.5±0.1
6.5±0.1
5.3±0.1
4.35±0.1
4.6±0.1
2.3±0.1
0.8max
0.75±0.1
1.0±0.1
0.1±0.05
0.5±0.1
2.3±0.1
0.5±0.1
1.0±0.2
V
V
A
123
A
mJ
1
W
1: Gate
2: Drain
3: Source
U Type Package
°C
°C
■ Electrical Characteristics (T
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
Thermal resistance between channel and atmosphere
C
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Yfs |
V
DSF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
f
t
d(off)
R
th(ch-c)
R
th(ch-a)
= 25°C)
Conditions
VDS = 320V, VGS = 0
VGS = ±20V, VDS = 0
ID = 1mA, VGS = 0
VDS = 10V, ID = 1mA
VGS = 10V, ID = 0.1A
VDS = 10V, ID = 0.1A
IDR = 0.1A, VGS = 0
VDS = 10V, VGS = 0, f = 1MHz
VDD = 100V, ID = 0.1A
VGS = 10V, RL = 1Ω
min
400
1
100
typ
17
160
48
10
5
65
35
40
70
max
10
±1
3
23
−1.5
12.5
125
Unit
µA
µA
V
V
Ω
mS
V
pF
pF
pF
ns
ns
ns
ns
°C/W
°C/W
1
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