Panasonic 2SK3064 Datasheet

Silicon MOS FETs (Small Signal)

2SK3064

Silicon N-Channel MOS FET

Secondary battery pack (Li ion battery, etc.)
For switching

■ Features

●High-speed switching

●S-mini type package, allowing downsizing of the sets and auto-

matic insertion through the tape/magazine packing.

●Low-voltage drive (V

: −1 to 2V)

th

●Low Ron

■ Absolute Maximum Ratings (Ta = 25°C)

Parameter

Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature

Symbol

V

DS

V

GSO

I

D

I

DP

P

D

T

ch

T

stg

Ratings

30
±20
100
200
150
150

−55 to +150

Unit

V

V
mA
mA

mW

°C
°C

unit: mm

2.1±0.1

1.25±0.1 0.4250.425

1

1.3±0.10.9±0.1

2.0±0.2

0.650.2 0.65

2

0.7±0.1

0.2±0.1

0 to 0.1

1: Gate
2: Source EIAJ: SC-70
3: Drain S-Mini Type Package (3-pin)

+0.1

3

+0.1

Marking Symbol: 2D

–0

0.3

–0.05

0.15

■ Electrical Characteristics (Ta = 25°C)

Parameter

Drain current
Gate cut-off current
Gate threshold voltage
Forward transfer admittance
Drain to source ON-resistance
Turn-on time
Turn-off time

Symbol

I

DSS

I

GSS

V

th

| Yfs |
R

DS(on)

t

on

t

off

VDS = 30V, VGS = 0
VGS = ±20V, VDS = 0
VDS = 5V, ID = 1µA
VDS = 5V, ID = 10mA
VDS = 5V, ID = 10mA
VDD = 5V, VGS = 0 to 5V, RL = 200Ω
VDD = 5V, VGS = 0 to 5V, RL = 200Ω

Conditions

min

1

15

typ

30

150

35

max

0.1
±1

2

50

Unit

µA
µA

V

mS

Ω

ns
ns

1

Silicon MOS FETs (Small Signal)

2SK3064

PD  Ta ID  V

200

)

mW

(

160

D

120

80

40

Allowable power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

ID  V

GS

240

200

)
mA

(

160

D

120

80

Drain current I

40

0

012108264

Gate to source voltage VGS (V

Ta=–25˚C

25˚C
75˚C

VDS=5V

DS

120

100

)
mA

(

80

D

60

40

Drain current I

20

0

012108264

)

Drain to source voltage VDS (V

VIN  I

100

30

)

10

V

(

IN

3

1

0.3

Input voltage V

0.1

0.03

0.01

0.1 1 10 1000.3 3 30

)

Output current IO (mA

O

Ta=25˚C

VGS=6.0V

5.5V

5.0V

4.5V

4.0V

3.5V

3.0V

2.5V

VO=5V
Ta=25˚C

)

)

60

)
mS

(

50

|

fs

40

30

20

10

Forward transfer admittance |Y

0

| Yfs |  V

012108264

GS

VDS=5V

Gate to source voltage VGS (V

)

2