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Power F-MOS FETs
2SK3049
Silicon N-Channel Power F-MOS FET
■ Features
●Avalanche energy capacity guaranteed
●High-speed switching
●Low ON-resistance
●No secondary breakdown
■ Applications
●Contactless relay
●Diving circuit for a solenoid
●Driving circuit for a motor
●Control equipment
●Switching power supply
15.0±0.513.7±0.2
4.2±0.2
9.9±0.3
φ3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
3.0±0.5
4.6±0.2
unit: mm
2.9±0.2
2.6±0.1
0.55±0.15
■ Absolute Maximum Ratings (T
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC
Pulse
Avalanche energy capacity
Allowable power
dissipation
TC = 25°C
Ta = 25°C
Channel temperature
Storage temperature
*
L = 5mH, IL = 5A, 1 pulse
■ Electrical Characteristics (T
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Turn-off time (delay time)
Fall time
Symbol
V
DSS
V
GSS
I
D
I
DP
*
EAS
P
D
T
ch
T
stg
C
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Yfs |
V
DSF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
= 25°C)
C
Ratings
Unit
600
±30
±5
±10
62.5
40
2
150
−55 to +150
= 25°C)
Conditions
VDS = 480V, VGS = 0
VGS = ±30V, VDS = 0
ID = 1mA, VGS = 0
VDS = 25V, ID = 1mA
VGS = 10V, ID = 3A
VDS = 25V, ID = 3A
IDR = 5A, VGS = 0
VDS = 20V, VGS = 0, f = 1MHz
VDD = 200V, ID = 3A
VGS = 10V, RL = 66.6Ω
mJ
W
°C
°C
23
2.54±0.3
5.08±0.5
1: Gate
2: Drain
3: Source
TO-220D Package
1
V
V
A
A
min
600
2
1.7
typ
0.85
3.4
1200
140
40
20
30
150
50
max
100
±1
5
1.5
−1.6
Unit
µA
µA
V
V
Ω
S
V
pF
pF
pF
ns
ns
ns
ns
1
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Power F-MOS FETs 2SK3049
Area of safe operation (ASO) PD Ta IAS L-load
100
30
10
)
A
(
D
3
1
0.3
Drain current I
0.1
0.03
0.01
1 10 100 10003 30 300
Non repetitive pulse
=25˚C
T
C
DC
10ms
100ms
Drain to source voltage VDS (V
I
V
D
GS
10
8
)
A
(
D
6
t=1ms
VDS=25V
=100˚C
T
C
)
60
)
W
(
50
D
40
30
20
10
Allowable power dissipation P
0
0 16040 12080 14020 10060
(1) TC=Ta
(2) Without heat sink
(1)
(2)
Ambient temperature Ta (˚C
R
I
)
Ω
(
DS(on)
DS(on)
2.5
2.0
1.5
D
TC=100˚C
10
IAS max.
3
)
A
(
1
0.3
0.1
Avalanche current IAS
0.03
0.01
0.1 10.3 3 10
)
L-load (mH
| Yfs | I
5
V
=10V
GS
V
=25V
DS
)
S
(
|
4
fs
3
TC=25˚C
62.5mJ
)
D
TC=0˚C
25˚C
100˚C
4
Drain current I
2
0
0108264
Gate to source voltage VGS (V
2
10
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
)
˚C/W
(
10
(t)
th
1
–1
10
Thermal resistance R
–2
10
–4
–3
10
–2
10
25˚C
0˚C
–1
10
1.0
0.5
Drain to source ON-resistance R
0
2468
0
)
R
t
th(t)
110
Time t (s
)
Drain current ID (A
1010
10
2
25˚C
0˚C
)
(1)
(2)
3
4
10
2
1
Forward transfer admittance |Y
0
2468
0
Drain current ID (A
)
2