Panasonic 2SK3049 Datasheet

Power F-MOS FETs

2SK3049

Silicon N-Channel Power F-MOS FET

■ Features

●Avalanche energy capacity guaranteed

●High-speed switching

●Low ON-resistance

●No secondary breakdown

■ Applications

●Contactless relay

●Diving circuit for a solenoid

●Driving circuit for a motor

●Control equipment

●Switching power supply

15.0±0.513.7±0.2

4.2±0.2

9.9±0.3

φ3.2±0.1

1.4±0.2

1.6±0.2

0.8±0.1

3.0±0.5

4.6±0.2

unit: mm

2.9±0.2

2.6±0.1

0.55±0.15

■ Absolute Maximum Ratings (T

Parameter

Drain to Source breakdown voltage
Gate to Source voltage

Drain current

DC

Pulse
Avalanche energy capacity
Allowable power
dissipation

TC = 25°C

Ta = 25°C
Channel temperature
Storage temperature

*

L = 5mH, IL = 5A, 1 pulse

■ Electrical Characteristics (T

Parameter

Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Turn-off time (delay time)
Fall time

Symbol

V

DSS

V

GSS

I

D

I

DP

*

EAS

P

D

T

ch

T

stg

C

Symbol

I

DSS

I

GSS

V

DSS

V

th

R

DS(on)

| Yfs |
V

DSF

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

= 25°C)

C

Ratings

Unit

600
±30

±5

±10

62.5
40

2

150

−55 to +150

= 25°C)

Conditions

VDS = 480V, VGS = 0
VGS = ±30V, VDS = 0
ID = 1mA, VGS = 0
VDS = 25V, ID = 1mA
VGS = 10V, ID = 3A
VDS = 25V, ID = 3A
IDR = 5A, VGS = 0

VDS = 20V, VGS = 0, f = 1MHz

VDD = 200V, ID = 3A
VGS = 10V, RL = 66.6Ω

mJ

W

°C
°C

23

2.54±0.3

5.08±0.5

1: Gate
2: Drain
3: Source

TO-220D Package

1

V
V
A
A

min

600

2

1.7

typ

0.85

3.4

1200

140

40
20
30

150

50

max

100

±1

5

1.5

−1.6

Unit

µA
µA

V
V

Ω

S

V
pF
pF
pF

ns
ns
ns
ns

1

Power F-MOS FETs 2SK3049

Area of safe operation (ASO) PD  Ta IAS  L-load

100

30

10

)
A

(

D

3

1

0.3

Drain current I

0.1

0.03

0.01
1 10 100 10003 30 300

Non repetitive pulse

=25˚C

T

C

DC

10ms

100ms

Drain to source voltage VDS (V

I

 V

D

GS

10

8

)
A

(

D

6

t=1ms

VDS=25V

=100˚C

T

C

)

60

)
W

(

50

D

40

30

20

10

Allowable power dissipation P

0

0 16040 12080 14020 10060

(1) TC=Ta
(2) Without heat sink

(1)

(2)

Ambient temperature Ta (˚C

R

 I

)

Ω

(

DS(on)

DS(on)

2.5

2.0

1.5

D

TC=100˚C

10

IAS max.

3

)
A

(

1

0.3

0.1

Avalanche current IAS

0.03

0.01

0.1 10.3 3 10

)

L-load (mH

| Yfs |  I

5

V

=10V

GS

V

=25V

DS

)
S

(
|

4

fs

3

TC=25˚C

62.5mJ

)

D

TC=0˚C

25˚C

100˚C

4

Drain current I

2

0

0108264

Gate to source voltage VGS (V

2

10

(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink

)
˚C/W

(

10

(t)

th

1

–1

10

Thermal resistance R

–2

10

–4

–3

10

–2

10

25˚C

0˚C

–1

10

1.0

0.5

Drain to source ON-resistance R

0

2468

0

)

R

 t

th(t)

110

Time t (s

)

Drain current ID (A

1010

10

2

25˚C

0˚C

)

(1)

(2)

3

4

10

2

1

Forward transfer admittance |Y

0

2468

0

Drain current ID (A

)

2