Panasonic 2SK3048 User Manual

Power F-MOS FETs

2SK3048

Silicon N-Channel Power F-MOS FET

■ Features

●Avalanche energy capacity guaranteed

●High-speed switching

●Low ON-resistance

●No secondary breakdown

■ Applications

●Contactless relay

●Diving circuit for a solenoid

●Driving circuit for a motor

●Control equipment

●Switching power supply

15.0±0.513.7±0.2

4.2±0.2

9.9±0.3

φ3.2±0.1

1.4±0.2

1.6±0.2

0.8±0.1

3.0±0.5

4.6±0.2

unit: mm

2.9±0.2

2.6±0.1

0.55±0.15

■ Absolute Maximum Ratings (T

Parameter

Drain to Source breakdown voltage
Gate to Source voltage

Drain current

DC

Pulse
Avalanche energy capacity
Allowable power
dissipation

TC = 25°C

Ta = 25°C
Channel temperature
Storage temperature

*

L = 5mH, IL = 3A, 1 pulse

■ Electrical Characteristics (T

Parameter

Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Turn-off time (delay time)
Fall time

Symbol

V

DSS

V

GSS

I

D

I

DP

*

EAS

P

D

T

ch

T

stg

C

Symbol

I

DSS

I

GSS

V

DSS

V

th

R

DS(on)

| Yfs |
V

DSF

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

= 25°C)

C

Ratings

Unit

600
±30

±3
±6

22.5
35

2

150

−55 to +150

= 25°C)

Conditions

VDS = 480V, VGS = 0
VGS = ±30V, VDS = 0
ID = 1mA, VGS = 0
VDS = 25V, ID = 1mA
VGS = 10V, ID = 2A
VDS = 25V, ID = 2A
IDR = 3A, VGS = 0

VDS = 20V, VGS = 0, f = 1MHz

VDD = 200V, ID = 2A
VGS = 10V, RL = 100Ω

mJ

W

°C
°C

23

2.54±0.3

5.08±0.5

1: Gate
2: Drain
3: Source

TO-220D Package

1

V
V
A
A

min

600

2

1.5

typ

1.7

2.5

750

80
25
15
25
90
40

max

100

±1

5

2.5

−1.5

Unit

µA
µA

V
V

Ω

S

V
pF
pF
pF

ns
ns
ns
ns

1

Power F-MOS FETs 2SK3048

Area of safe operation (ASO) PD  Ta IAS  L-load

100

30

10

)
A

(

D

3

1

0.3

Drain current I

0.1

0.03

0.01
1 10 100 10003 30 300

Non repetitive pulse

=25˚C

T

C

DC

10ms

100ms

Drain to source voltage VDS (V

I

 V

D

DS

6

=10V

5

)

A

(

4

D

3

2

GS

V

7V

6V

Drain current I

1

0

0 5 10 15 20 25

Drain to source voltage VDS (V

1ms

t=10µs

100µs

TC=25˚C

5.5V

40W

4.5V

4V

60

)
W

(

50

D

40

30

20

10

Allowable power dissipation P

0

0 16040 12080 14020 10060

)

5V

Ambient temperature Ta (˚C

6

5

)
A

(

4

D

3

2

(1) TC=Ta
(2) Without heat sink

(1)

(2)

ID  V

GS

)

VDS=25V

Drain current I

1

85˚C

0

012108264

)

Gate to source voltage VGS (V

0˚CTC=125˚C
25˚C

)

10

)
A

3

(

1

0.3

Avalanche current IAS

0.1

10.1 1030.3

L-load (mH

VDS  V

35

)

30

V

(

DS

25

20

15

10

5

Drain to source voltage V

0

0 5 10 15 20 25 30

GS

Gate to source voltage VGS (V

TC=25˚C

22.5mJ

)

TC=25˚C

ID=3A

2A
1A

)

R

 I

DS(on)

6

)

Ω

(

5

DS(on)

4

3

2

1

Drain to source ON-resistance R

0

0123456

T

C

=125˚C

85˚C

25˚C

0˚C

Drain current ID (A

2

D

VGS=10V

)

| Yfs |  I

7

)
S

(

6

|

fs

5

4

3

2

1

D

VDS=25V

T

85˚C

125˚C

C

=0˚C

25˚C

,

)

Common source

(

, Output capacitance

)

Common source

(

Forward transfer admittance |Y

0

05

Drain current ID (A

43216

)

Input capacitance

C

, C

, C

oss

rss

 V

iss

)

pF

(

1000

rss

,C

oss

300

,C

iss

C

)

100

Common source

(

30

10

Reverse transfer capacitance

0 10020 40 60 80

Drain to source voltage VDS (V

DS

f=1MHz
T

C

C

iss

C

oss

C

rss

=25˚C

)