Panasonic 2SK3048 User Manual

Power F-MOS FETs

2SK3048

Silicon N-Channel Power F-MOS FET

■ Features

●Avalanche energy capacity guaranteed

●High-speed switching

●Low ON-resistance

●No secondary breakdown

■Applications

●Contactless relay

●Diving circuit for a solenoid ●Driving circuit for a motor ●Control equipment

●Switching power supply

■Absolute Maximum Ratings (TC = 25°C)

Parameter			Symbol	Ratings	Unit
Drain to Source breakdown voltage			VDSS	600	V
Gate to Source voltage			VGSS	±30	V
Drain current		DC	ID	±3	A
		Pulse	IDP	±6	A
Avalanche energy capacity			EAS*	22.5	mJ
Allowable power		TC = 25°C	PD	35	W
dissipation		Ta = 25°C		2
Channel temperature			Tch	150	°C
Storage temperature			Tstg	−55 to +150	°C

* L = 5mH, IL = 3A, 1 pulse

				unit: mm
	9.9±0.3			4.6±0.2
				2.9±0.2
			3.0±0.5
15.0±0.5
			φ3.2±0.1
	4.2±0.2		1.4±0.2	2.6±0.1
			1.6±0.2
13.7±0.2
			0.8±0.1	0.55±0.15
			2.54±0.3
	1	2	3 5.08±0.5
				1: Gate
				2: Drain
				3: Source
				TO-220D Package

■ Electrical Characteristics (TC = 25°C)

Parameter	Symbol	Conditions	min	typ	max	Unit
Drain to Source cut-off current	IDSS	VDS = 480V, VGS = 0			100	µA
Gate to Source leakage current	IGSS	VGS = ±30V, VDS = 0			±1	µA
Drain to Source breakdown voltage	VDSS	ID = 1mA, VGS = 0	600			V
Gate threshold voltage	Vth	VDS = 25V, ID = 1mA	2		5	V
Drain to Source ON-resistance	RDS(on)	VGS = 10V, ID = 2A		1.7	2.5	Ω
Forward transfer admittance	| Yfs |	VDS = 25V, ID = 2A	1.5	2.5		S
Diode forward voltage	VDSF	IDR = 3A, VGS = 0			−1.5	V
Input capacitance (Common Source)	Ciss			750		pF
Output capacitance (Common Source)	Coss	VDS = 20V, VGS = 0, f = 1MHz		80		pF
Reverse transfer capacitance (Common Source)	Crss			25		pF
Turn-on time (delay time)	td(on)			15		ns
Rise time	tr	VDD = 200V, ID = 2A		25		ns
		VGS = 10V, RL = 100Ω
Turn-off time (delay time)	td(off)			90		ns
Fall time	tf			40		ns

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Power F-MOS FETs																					2SK3048
	Area of safe operation (ASO)											PD Ta								IAS L-load
	100			Non repetitive pulse					60										10			TC=25˚C
								(W)					(1) TC=Ta
				TC=25˚C
	30												(2) Without heat sink
									50
(A)								P										(A)
	10					t=10 s		D											3
																						22.5mJ
IcurrentDrain								dissipationpowerAllowable										IAScurrentAvalanche
						100 s			40
D	3
					1ms
																			1
	1			DC					30
												(1)
	0.3			10ms
									20										0.3
	0.1			100ms
									10										0.1
	0.03
												(2)
	0.01								0
	1	3	10	30	100	300	1000		0	20	40	60	80	100	120	140	160		0.1	0.3	1	3	10
	Drain to source voltage					VDS	(V)			Ambient temperature					Ta	(˚C)				L-load	(mH)
			ID VDS									ID VGS								VDS VGS

	6	=10V			TC=25˚C				6
	5	GS							5
		V	7V
(A)	4		6V					(A)	4
					5.5V
D								D
I								I
current	3							current	3
						5V
Drain								Drain
	2								2
					40W
	1				4.5V				1
					4V
	0								0
	0	5	10	15	20		25
	Drain to source voltage				VDS	(V)
		RDS(on) ID

					VDS=25V
	TC=125˚C			0˚C
	85˚C			25˚C
0	2	4	6	8	10	12
Gate to source voltage					VGS	(V)

| Yfs | ID

Ω)	6																			7
																VGS=10V												VDS=25V
(																			(S)
DS(on)	5																		fs	6
																			|
R																			|Y	5
resistance-	4				T	C=125˚C													admittance
																													TC		=0˚C
																				4
								85˚C
ONsourcetoDrain	3																		transferForward	3											25˚C
																												85˚C
										25˚C
	2																										125˚C
																				2
											0˚C
	1																			1
	0
																				0
																						1	2	3		4							6
	0		1		2		3					4			5			6		0								5
				Drain current									ID		(A)								Drain current			ID		(A)

	35
(V)										TC=25˚C
	30
DS	25
V
voltage	20
sourceto	10
Drain	15
	5										ID=3A
												2A
												1A
	0
	0		5	10		15		20		25		30
	Gate to source voltage									VGS		(V)

			Ciss, Coss, Crss VDS
source),	(pF)					f=1MHz
		1000				TC=25˚C
(Common	rss
						Ciss
	,C
	oss	300
capacitance	,C
	iss
	C
Input capacitance (Common source), Output	Reverse transfer capacitance (Common source)	100
						Coss
		30
						Crss
		10
		0	20	40	60	80	100
		Drain to source voltage				VDS	(V)

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