Panasonic 2SK3047 Datasheet
Power F-MOS FETs
2SK3047
Silicon N-Channel Power F-MOS FET
■ Features
●Avalanche energy capacity guaranteed: EAS > 15mJ
●V
= ±30V guaranteed
GSS
●High-speed switching: t
●No secondary breakdown
■ Applications
●Contactless relay
●Diving circuit for a solenoid
●Driving circuit for a motor
●Control equipment
●Switching power supply
= 25ns
f
15.0±0.513.7±0.2
4.2±0.2
9.9±0.3
φ3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
3.0±0.5
4.6±0.2
unit: mm
2.9±0.2
2.6±0.1
0.55±0.15
■ Absolute Maximum Ratings (T
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC
Pulse
Avalanche energy capacity
Allowable power
dissipation
TC = 25°C
Ta = 25°C
Channel temperature
Storage temperature
*
L = 5mH, IL = 2.45A, VDD = 50V, 1 pulse
■ Electrical Characteristics (T
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Turn-off time (delay time)
Fall time
Symbol
V
DSS
V
GSS
I
D
I
DP
*
EAS
P
D
T
ch
T
stg
C
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Yfs |
V
DSF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
= 25°C)
C
Ratings
Unit
800
±30
±2
±4
15
30
2
150
−55 to +150
= 25°C)
Conditions
VDS = 640V, VGS = 0
VGS = ±30V, VDS = 0
ID = 1mA, VGS = 0
VDS = 25V, ID = 1mA
VGS = 10V, ID = 1A
VDS = 25V, ID = 1A
IDR = 2A, VGS = 0
VDS = 20V, VGS = 0, f = 1MHz
VGS = 10V, ID = 1A
VDD = 200V, RL = 200Ω
mJ
W
°C
°C
23
2.54±0.3
5.08±0.5
1: Gate
2: Drain
3: Source
TO-220D Package
1
V
V
A
A
min
800
2
0.7
typ
4.8
1.1
350
60
25
15
20
60
25
max
0.1
±1
5
7
−1.3
Unit
mA
µA
V
V
Ω
S
V
pF
pF
pF
ns
ns
ns
ns
1
Power F-MOS FETs 2SK3047
Area of safe operation (ASO) PD Ta EAS T
100
30
10
)
A
(
D
3
1
0.3
Drain current I
0.1
0.03
0.01
1 10 100 10003 30 300
Non repetitive pulse
=25˚C
T
C
DC
10ms
100ms
1ms
Drain to source voltage VDS (V
ID V
DS
4
VGS=15V
3
)
A
(
D
2
Drain current I
1
0
10V
7V
6.5V
6V
0 102030405060
Drain to source voltage VDS (V
t =10µs
100µs
)
TC=25˚C
5.5V
5V
)
60
)
W
(
50
D
40
30
20
10
Allowable power dissipation P
0
0 16040 12080 14020 10060
(1) TC=Ta
(2) Without heat sink
(1)
(2)
Ambient temperature Ta (˚C
ID V
GS
5
4
)
A
(
D
3
2
=0˚C
C
T
25˚C
100˚C
Drain current I
1
0
012108264
Gate to source voltage VGS (V
VDS=25V
125˚C
30
)
mJ
(
25
20
15
10
5
Avalanche energy capacity EAS
0
25 50
)
)
Junction temperature Tj (˚C
6
)
5
V
(
th
4
3
2
1
Gate threshold voltage V
0
0 25 50 75 100 125 150
Case temperature TC (˚C
j
VDD=50V
I
=2A
D
75 100 125 150 175
)
Vth T
C
VDS=25V
=1mA
I
D
)
R
I
DS(on)
12
)
Ω
(
10
DS(on)
8
6
4
2
Drain to source ON-resistance R
0
012345
VGS=10V
15V
Drain current ID (A
2
D
2.0
)
S
(
|
fs
1.5
1.0
0.5
| Yfs | I
D
VDS=25V
=25˚C
T
C
,
)
Common source
(
, Output capacitance
)
Common source
(
C
, C
iss
10000
)
pF
(
rss
,C
1000
oss
,C
iss
C
)
100
Common source
(
10
oss
, C
rss
V
DS
f=1MHz
=25˚C
T
C
C
iss
C
oss
C
rss
Forward transfer admittance |Y
Input capacitance
Reverse transfer capacitance
0
12 4
0
)
Drain current ID (A
3
)
1
0 50 100 150 200
Drain to source voltage VDS (V
)
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