Panasonic 2SK3047 Datasheet

Power F-MOS FETs

2SK3047

Silicon N-Channel Power F-MOS FET

■ Features

●Avalanche energy capacity guaranteed: EAS > 15mJ

●V

= ±30V guaranteed

GSS

●High-speed switching: t

●No secondary breakdown

■ Applications

●Contactless relay

●Diving circuit for a solenoid

●Driving circuit for a motor

●Control equipment

●Switching power supply

= 25ns

f

15.0±0.513.7±0.2

4.2±0.2

9.9±0.3

φ3.2±0.1

1.4±0.2

1.6±0.2

0.8±0.1

3.0±0.5

4.6±0.2

unit: mm

2.9±0.2

2.6±0.1

0.55±0.15

■ Absolute Maximum Ratings (T

Parameter

Drain to Source breakdown voltage
Gate to Source voltage

Drain current

DC

Pulse
Avalanche energy capacity
Allowable power
dissipation

TC = 25°C

Ta = 25°C
Channel temperature
Storage temperature

*

L = 5mH, IL = 2.45A, VDD = 50V, 1 pulse

■ Electrical Characteristics (T

Parameter

Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Turn-off time (delay time)
Fall time

Symbol

V

DSS

V

GSS

I

D

I

DP

*

EAS

P

D

T

ch

T

stg

C

Symbol

I

DSS

I

GSS

V

DSS

V

th

R

DS(on)

| Yfs |
V

DSF

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

= 25°C)

C

Ratings

Unit

800
±30

±2
±4
15
30

2

150

−55 to +150

= 25°C)

Conditions

VDS = 640V, VGS = 0
VGS = ±30V, VDS = 0
ID = 1mA, VGS = 0
VDS = 25V, ID = 1mA
VGS = 10V, ID = 1A
VDS = 25V, ID = 1A
IDR = 2A, VGS = 0

VDS = 20V, VGS = 0, f = 1MHz

VGS = 10V, ID = 1A
VDD = 200V, RL = 200Ω

mJ

W

°C
°C

23

2.54±0.3

5.08±0.5

1: Gate
2: Drain
3: Source

TO-220D Package

1

V
V
A
A

min

800

2

0.7

typ

4.8

1.1

350

60
25
15
20
60
25

max

0.1
±1

5
7

−1.3

Unit

mA

µA

V
V

Ω

S

V
pF
pF
pF

ns
ns
ns
ns

1

Power F-MOS FETs 2SK3047

Area of safe operation (ASO) PD  Ta EAS  T

100

30

10

)

A

(

D

3

1

0.3

Drain current I

0.1

0.03

0.01
1 10 100 10003 30 300

Non repetitive pulse

=25˚C

T

C

DC

10ms

100ms

1ms

Drain to source voltage VDS (V

ID  V

DS

4

VGS=15V

3

)
A

(

D

2

Drain current I

1

0

10V

7V

6.5V

6V

0 102030405060

Drain to source voltage VDS (V

t =10µs

100µs

)

TC=25˚C

5.5V

5V

)

60

)
W

(

50

D

40

30

20

10

Allowable power dissipation P

0

0 16040 12080 14020 10060

(1) TC=Ta
(2) Without heat sink

(1)

(2)

Ambient temperature Ta (˚C

ID  V

GS

5

4

)
A

(

D

3

2

=0˚C

C

T

25˚C

100˚C

Drain current I

1

0

012108264

Gate to source voltage VGS (V

VDS=25V

125˚C

30

)
mJ

(

25

20

15

10

5

Avalanche energy capacity EAS

0

25 50

)

)

Junction temperature Tj (˚C

6

)

5

V

(

th

4

3

2

1

Gate threshold voltage V

0

0 25 50 75 100 125 150

Case temperature TC (˚C

j

VDD=50V
I

=2A

D

75 100 125 150 175

)

Vth  T

C

VDS=25V

=1mA

I

D

)

R

 I

DS(on)

12

)

Ω

(

10

DS(on)

8

6

4

2

Drain to source ON-resistance R

0

012345

VGS=10V

15V

Drain current ID (A

2

D

2.0

)
S

(
|

fs

1.5

1.0

0.5

| Yfs |  I

D

VDS=25V

=25˚C

T

C

,

)

Common source

(

, Output capacitance

)

Common source

(

C

, C

iss

10000

)
pF

(

rss

,C

1000

oss

,C

iss

C

)

100

Common source

(

10

oss

, C

rss

 V

DS

f=1MHz

=25˚C

T

C

C

iss

C

oss

C

rss

Forward transfer admittance |Y

Input capacitance

Reverse transfer capacitance

0

12 4

0

)

Drain current ID (A

3

)

1

0 50 100 150 200

Drain to source voltage VDS (V

)