Panasonic 2SK3043 Datasheet
Power F-MOS FETs
2SK3043
Silicon N-Channel Power F-MOS FET
■ Features
●Avalanche energy capacity guaranteed: EAS > 100mJ
●V
= ±30V guaranteed
GSS
●High-speed switching: t
●No secondary breakdown
■ Applications
●Contactless relay
●Diving circuit for a solenoid
●Driving circuit for a motor
●Control equipment
●Switching power supply
= 35ns
f
15.0±0.513.7±0.2
4.2±0.2
9.9±0.3
φ3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
3.0±0.5
4.6±0.2
unit: mm
2.9±0.2
2.6±0.1
0.55±0.15
■ Absolute Maximum Ratings (T
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC
Pulse
Avalanche energy capacity
Allowable power
dissipation
TC = 25°C
Ta = 25°C
Channel temperature
Storage temperature
*
L = 8mH, IL = 5A, VDD = 50V, 1 pulse
■ Electrical Characteristics (T
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Turn-off time (delay time)
Fall time
Symbol
V
DSS
V
GSS
I
D
I
DP
*
EAS
P
D
T
ch
T
stg
C
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Yfs |
V
DSF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
= 25°C)
C
Ratings
Unit
450
±30
±5
±10
100
35
2
150
−55 to +150
= 25°C)
Conditions
VDS = 360V, VGS = 0
VGS = ±30V, VDS = 0
ID = 1mA, VGS = 0
VDS = 25V, ID = 1mA
VGS = 10V, ID = 3A
VDS = 25V, ID = 3A
IDR = 5A, VGS = 0
VDS = 20V, VGS = 0, f = 1MHz
VGS = 10V, ID = 3A
VDD = 150V, RL = 50Ω
mJ
W
°C
°C
23
2.54±0.3
5.08±0.5
1: Gate
2: Drain
3: Source
TO-220D Package
1
V
V
A
A
min
450
2
1.8
typ
1
2.5
700
100
40
25
45
80
35
max
0.1
±1
5
1.3
−1.2
Unit
mA
µA
V
V
Ω
S
V
pF
pF
pF
ns
ns
ns
ns
1
Power F-MOS FETs 2SK3043
Area of safe operation (ASO) PD Ta EAS T
100
30
10
)
A
(
D
3
1
0.3
Drain current I
0.1
0.03
0.01
1 10 100 10003 30 300
DC
100µs
1ms
10ms
Non repetitive pulse
=25˚C
T
C
100ms
Drain to source voltage VDS (V
ID V
DS
8
7
VGS=15V
10V
6
)
A
(
D
Drain current I
6.5V
5
4
3
2
1
0
0 102030405060
6V
5.5V
Drain to source voltage VDS (V
T
C
5V
t=10µs
=25˚C
50W
4.5V
60
)
W
(
50
D
40
30
20
10
Allowable power dissipation P
0
0 16040 12080 14020 10060
)
Ambient temperature Ta (˚C
10
8
)
A
(
D
6
4
Drain current I
2
0
012108264
)
Gate to source voltage VGS (V
(1) TC=Ta
(2) Without heat sink
(1)
(2)
ID V
GS
TC=0˚C 150˚C
25˚C
)
VDS=25V
100˚C
)
120
)
mJ
(
100
80
60
40
20
Avalanche energy capacity EAS
0
25 50
Junction temperature Tj (˚C
6
)
5
V
(
th
4
3
2
1
Gate threshold voltage V
0
0 25 50 75 100 125 150
Case temperature TC (˚C
j
VDD=50V
I
=5A
D
75 100 125 150 175
)
Vth T
C
VDS=25V
=1mA
I
D
)
VDS V
40
35
)
V
(
30
DS
25
20
15
10
Drain to source voltage V
5
0
0 5 10 15 20 25 30
Gate to source voltage VGS (V
2
GS
TC=25˚C
10A
5A
2.5A
6
)
Ω
(
5
DS(on)
4
3
2
1
Drain to source ON-resistance R
0
0108264
)
Drain current ID (A
R
DS(on)
T
C
I
=150˚C
100˚C
25˚C
0˚C
D
VGS=10V
)
| Yfs | I
3.0
VDS=25V
)
S
T
=25˚C
(
C
2.5
|
fs
2.0
1.5
1.0
0.5
D
Forward transfer admittance |Y
0
012345
Drain current ID (A
)
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