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Power F-MOS FETs
2SK3042
Silicon N-Channel Power F-MOS FET
■ Features
●Avalanche energy capacity guaranteed: EAS > 45mJ
●High-speed switching: t
●No secondary breakdown
= 30ns
f
9.9±0.3
4.6±0.2
unit: mm
2.9±0.2
■ Applications
●Contactless relay
●Diving circuit for a solenoid
●Driving circuit for a motor
●Control equipment
●Switching power supply
■ Absolute Maximum Ratings (T
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC
Pulse
Avalanche energy capacity
Allowable power
dissipation
TC = 25°C
Ta = 25°C
Channel temperature
Storage temperature
*
L = 0.1mH, IL = 8A, VDD = 50V, 1 pulse
■ Electrical Characteristics (T
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Turn-off time (delay time)
Fall time
Symbol
V
DSS
V
GSS
I
D
I
DP
*
EAS
P
D
T
ch
T
stg
C
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Yfs |
V
DSF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
= 25°C)
C
Ratings
Unit
250
±20
±7
±14
45
35
2
150
−55 to +150
= 25°C)
Conditions
VDS = 200V, VGS = 0
VGS = ±20V, VDS = 0
ID = 1mA, VGS = 0
VDS = 10V, ID = 1mA
VGS = 10V, ID = 5A
VDS = 10V, ID = 5A
IDR = 8A, VGS = 0
VDS = 10V, VGS = 0, f = 1MHz
VGS = 10V, ID = 5A
VDD = 100V, RL = 20Ω
mJ
W
°C
°C
3.0±0.5
φ3.2±0.1
15.0±0.513.7±0.2
1.4±0.2
23
1.6±0.2
0.8±0.1
2.54±0.3
5.08±0.5
4.2±0.2
V
1
V
A
A
min
typ
TO-220D Package
max
0.1
±1
250
2.7
1
0.4
4.7
5
0.6
−1.7
1100
200
60
20
20
130
30
2.6±0.1
0.55±0.15
1: Gate
2: Drain
3: Source
Unit
mA
µA
V
V
Ω
S
V
pF
pF
pF
ns
ns
ns
ns
1
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Power F-MOS FETs
2SK3042
Area of safe operation (ASO) PD Ta ID V
100
30
10
)
A
(
D
3
100µs
1
0.3
Drain current I
0.1
0.03
0.01
1 10 100 10003 30 300
DC
1ms
10ms
Non repetitive pulse
=25˚C
T
C
100ms
Drain to source voltage VDS (V
ID V
10
VDS=10V
8
)
A
(
D
6
4
Drain current I
2
T
=0˚C
C
25˚C
75˚C
GS
t =10µs
125˚C
150˚C
60
)
W
(
50
D
40
30
20
10
Allowable power dissipation P
0
0 16040 12080 14020 10060
)
Ambient temperature Ta (˚C
6.6
6.4
)
V
(
6.2
GS
6.0
5.8
5.6
5.4
Gate to source voltage V
5.2
(1) TC=Ta
(2) Without heat sink
(1)
(2)
VGS T
)
C
VDS=10V
=3A
I
D
16
14
12
)
A
(
10
D
8
6
Drain current I
4
2
0
0
Drain to source voltage VDS (V
6
)
5
V
(
th
4
3
2
1
Gate threshold voltage V
DS
=25˚C
T
C
=15V
V
GS
10V
7.5V
7V
6.5V
6V
40W
5.5V
5V
5101520
)
Vth T
C
VDS=25V
=1mA
I
D
0
012108264
Gate to source voltage VGS (V
R
I
DS(on)
0.6
)
Ω
(
0.5
DS(on)
0.4
0.3
0.2
0.1
Drain to source ON-resistance R
0
0108264
=10V
V
GS
15V
Drain current ID (A
2
D
TC=25˚C
)
5.0
0 25 50 75 100 125 150
)
Case temperature TC (˚C
8
)
S
(
7
|
fs
6
5
4
3
2
1
Forward transfer admittance |Y
0
02
| Yfs | I
4 6 8 10121416
Drain current ID (A
D
VDS=10V
=25˚C
T
C
)
)
,
)
Common source
(
, Output capacitance
)
Common source
(
Input capacitance
0
0 25 50 75 100 125 150
Case temperature TC (˚C
C
, C
, C
oss
rss
V
iss
10000
)
pF
(
3000
rss
,C
1000
oss
,C
iss
300
C
)
100
30
Common source
(
10
3
Reverse transfer capacitance
1
0 40 80 120 160 200
Drain to source voltage VDS (V
DS
f=1MHz
=25˚C
T
C
C
C
C
)
iss
oss
rss
)