Panasonic 2SK3042 Datasheet

Power F-MOS FETs

2SK3042

Silicon N-Channel Power F-MOS FET

■ Features

●Avalanche energy capacity guaranteed: EAS > 45mJ

●High-speed switching: t

●No secondary breakdown

= 30ns

f

9.9±0.3

4.6±0.2

unit: mm

2.9±0.2

■ Applications

●Contactless relay

●Diving circuit for a solenoid

●Driving circuit for a motor

●Control equipment

●Switching power supply

■ Absolute Maximum Ratings (T

Parameter

Drain to Source breakdown voltage
Gate to Source voltage

Drain current

DC

Pulse
Avalanche energy capacity
Allowable power
dissipation

TC = 25°C

Ta = 25°C
Channel temperature
Storage temperature

*

L = 0.1mH, IL = 8A, VDD = 50V, 1 pulse

■ Electrical Characteristics (T

Parameter

Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Turn-off time (delay time)
Fall time

Symbol

V

DSS

V

GSS

I

D

I

DP

*

EAS

P

D

T

ch

T

stg

C

Symbol

I

DSS

I

GSS

V

DSS

V

th

R

DS(on)

| Yfs |
V

DSF

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

= 25°C)

C

Ratings

Unit

250
±20

±7

±14

45
35

2

150

−55 to +150

= 25°C)

Conditions

VDS = 200V, VGS = 0
VGS = ±20V, VDS = 0
ID = 1mA, VGS = 0
VDS = 10V, ID = 1mA
VGS = 10V, ID = 5A
VDS = 10V, ID = 5A
IDR = 8A, VGS = 0

VDS = 10V, VGS = 0, f = 1MHz

VGS = 10V, ID = 5A
VDD = 100V, RL = 20Ω

mJ

W

°C
°C

3.0±0.5

φ3.2±0.1

15.0±0.513.7±0.2

1.4±0.2

23

1.6±0.2

0.8±0.1

2.54±0.3

5.08±0.5

4.2±0.2

V

1

V
A
A

min

typ

TO-220D Package

max

0.1
±1

250

2.7

1

0.4

4.7

5

0.6

−1.7

1100

200

60
20
20

130

30

2.6±0.1

0.55±0.15

1: Gate
2: Drain
3: Source

Unit

mA

µA

V
V

Ω

S

V
pF
pF
pF

ns
ns
ns
ns

1

Power F-MOS FETs

2SK3042

Area of safe operation (ASO) PD  Ta ID  V

100

30

10

)
A

(

D

3

100µs

1

0.3

Drain current I

0.1

0.03

0.01
1 10 100 10003 30 300

DC

1ms

10ms

Non repetitive pulse

=25˚C

T

C

100ms

Drain to source voltage VDS (V

ID  V

10

VDS=10V

8

)

A

(

D

6

4

Drain current I

2

T

=0˚C

C

25˚C
75˚C

GS

t =10µs

125˚C
150˚C

60

)
W

(

50

D

40

30

20

10

Allowable power dissipation P

0

0 16040 12080 14020 10060

)

Ambient temperature Ta (˚C

6.6

6.4

)
V

(

6.2

GS

6.0

5.8

5.6

5.4

Gate to source voltage V

5.2

(1) TC=Ta
(2) Without heat sink

(1)

(2)

VGS  T

)

C

VDS=10V

=3A

I

D

16

14

12

)
A

(

10

D

8

6

Drain current I

4

2

0

0

Drain to source voltage VDS (V

6

)

5

V

(

th

4

3

2

1

Gate threshold voltage V

DS

=25˚C

T

C

=15V

V

GS

10V

7.5V

7V

6.5V

6V

40W

5.5V
5V

5101520

)

Vth  T

C

VDS=25V

=1mA

I

D

0

012108264

Gate to source voltage VGS (V

R

 I

DS(on)

0.6

)

Ω

(

0.5

DS(on)

0.4

0.3

0.2

0.1

Drain to source ON-resistance R

0

0108264

=10V

V

GS

15V

Drain current ID (A

2

D

TC=25˚C

)

5.0
0 25 50 75 100 125 150

)

Case temperature TC (˚C

8

)
S

(

7

|

fs

6

5

4

3

2

1

Forward transfer admittance |Y

0

02

| Yfs |  I

4 6 8 10121416

Drain current ID (A

D

VDS=10V

=25˚C

T

C

)

)

,

)

Common source

(

, Output capacitance

)

Common source

(

Input capacitance

0

0 25 50 75 100 125 150

Case temperature TC (˚C

C

, C

, C

oss

rss

 V

iss

10000

)

pF

(

3000

rss

,C

1000

oss

,C

iss

300

C

)

100

30

Common source

(

10

3

Reverse transfer capacitance

1

0 40 80 120 160 200

Drain to source voltage VDS (V

DS

f=1MHz

=25˚C

T

C

C

C

C

)

iss

oss

rss

)