Panasonic 2SK3036 Datasheet
Power F-MOS FETs
2SK3036
Silicon N-Channel Power F-MOS FET
■ Features
●Avalanche energy capacity guaranteed
●High-speed switching
●Low ON-resistance
●No secondary breakdown
●Low-voltage drive
●High electrostatic breakdown voltage
■ Applications
●Contactless relay
●Diving circuit for a solenoid
●Driving circuit for a motor
●Control equipment
●Switching power supply
1.8±0.1
7.3±0.1
0.93±0.1
2.5±0.1
6.5±0.1
5.3±0.1
4.35±0.1
4.6±0.1
2.3±0.1
0.8max
0.75±0.1
1.0±0.1
0.1±0.05
0.5±0.1
unit: mm
2.3±0.1
0.5±0.1
1.0±0.2
■ Absolute Maximum Ratings (T
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC
Pulse
Avalanche energy capacity
Allowable power
dissipation
TC = 25°C
Ta = 25°C
Channel temperature
Storage temperature
*
L = 0.1mH, IL = 6A, 1 pulse
■ Electrical Characteristics (T
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Turn-off time (delay time)
Fall time
Symbol
V
DSS
V
GSS
I
D
I
DP
*
EAS
P
D
T
ch
T
stg
C
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)1
R
DS(on)2
| Yfs |
V
DSF
C
iss
C
oss
C
rss
t
on
t
d(off)
t
f
= 25°C)
C
Ratings
Unit
150
±20
±6
±12
3.6
20
1
150
−55 to +150
= 25°C)
Conditions
VDS = 120V, VGS = 0
VGS = ±20V, VDS = 0
ID = 1mA, VGS = 0
VDS = 10V, ID = 1mA
VGS = 10V, ID = 3A
VGS = 4V, ID = 3A
VDS = 10V, ID = 3A
IDR = 6A, VGS = 0
VDS = 10V, VGS = 0, f = 1MHz
VDD = 100V, ID = 3A
VGS = 10V, RL = 33Ω
mJ
W
°C
°C
V
123
V
1: Gate
2: Drain
3: Source
U Type Package
A
A
Internal Connection
G
min
150
1
typ
300
340
4.2
300
76
40
80
920
250
S
max
10
±10
2.5
450
510
−1.6
D
Unit
µA
µA
V
V
mΩ
mΩ
S
V
pF
pF
pF
ns
ns
ns
1
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