Panasonic 2SK3026 Datasheet

Power F-MOS FETs
2SK3026 (Tentative)
Silicon N-Channel Power F-MOS FET
Features
Avalanche energy capacity guaranteed
High-speed switching
No secondary breakdown
Low-voltage drive
High electrostatic breakdown voltage
Applications
Contactless relay
Diving circuit for a solenoid
Driving circuit for a motor
Control equipment
Switching power supply
Absolute Maximum Ratings (T
Parameter
Drain to Source breakdown voltage Gate to Source voltage
Drain current
DC
Pulse Avalanche energy capacity Allowable power dissipation
TC = 25°C
Ta = 25°C Channel temperature Storage temperature
*
L = 0.1mH, IL = 40A, 1 pulse
Symbol
V V I
D
I
DP
EAS
P
D
T
ch
T
stg
DSS
GSS
*
= 25°C)
C
Ratings
±20 ±40 ±80
150
55 to +150
60
80 50
Unit
V V A A
mJ
2
W
°C °C
9.9±0.3
φ3.2±0.1
231
3.0±0.2
1.2±0.15
1.45±0.15
0.75±0.1
2.54±0.2
5.08±0.4
15.0±0.313.7
8.0±0.2
–0.2
+0.5
4.1±0.2
Solder Dip
7
Internal Connection
G
unit: mm
4.6±0.2
2.9±0.2
2.6±0.1
0.7±0.1
1: Gate 2: Drain 3: Source
TO-220E Package (a)
D
S
Electrical Characteristics (T
Parameter
Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance Diode forward voltage Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Thermal resistance between channel and case Thermal resistance between channel and atmosphere
C
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)1
R
DS(on)2
| Yfs | V
DSF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
f
t
d(off)
R
th(ch-c)
R
th(ch-a)
= 25°C)
Conditions
VDS = 50V, VGS = 0 VGS = ±20V, VDS = 0 ID = 1mA, VGS = 0 VDS = 10V, ID = 1mA VGS = 10V, ID = 20A VGS = 4V, ID = 20A VDS = 10V, ID = 20A IDR = 20A, VGS = 0
VDS = 10V, VGS = 0, f = 1MHz
VDD = 30V, ID = 20A VGS = 10V, RL = 1.5
min
60
1
19
typ
12 16 37
2350
810 450
15
55 180 600
max
10
±10
2.5 18 24
1.2
2.5
62.5
Unit
µA µA
V V
m m
S
V pF pF pF
ns ns ns
ns °C/W °C/W
1
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