Panasonic 2SK2751 Datasheet

Silicon Junction FETs (Small Signal)

2SK2751

Silicon N-Channel Junction FET

For impedance conversion in low frequency
For pyroelectric sensor

■ Features

●Low noise-figure (NF)

●High gate to drain voltage V

GDO

●Mini-type package, allowing downsizing of the sets and automatic

insertion through the tape/magazine packing.

■ Absolute Maximum Ratings (Ta = 25°C)

Parameter

Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature

Symbol

V

GDS

I

D

I

G

P

D

T

ch

T

stg

Ratings

−40

10

2
200
150

−55 to +150

Unit

V
mA
mA

mW

°C
°C

+0.2

2.8

–0.3
+0.25

1.5

0.65±0.15 0.65±0.15

1

0.950.95

+0.2

–0.05

2.9

1.9±0.2

2

+0.2

–0.1

0.8

1.1

0.1 to 0.3

0.4±0.2

1: Source JEDEC: TO-236
2: Drain EIAJ: SC-59
3: Gate Mini Type Package (3-pin)

–0.05

unit: mm

1.45

3

+0.1

+0.1

0 to 0.1

Marking Symbol: HS

–0.05

0.4

–0.06

0.16

■ Electrical Characteristics (Ta = 25 ± 3°C)

Parameter

Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)

Note: The test method to comply with JISC7030, Field effect transistor test method.

Symbol

I

DSS

I

GSS

V

GDS

V

GSC

| Yfs |
C

iss

C

oss

C

rss

Conditions

VDS = 10V, VGS = 0
VGS = −20V, VDS = 0
IG = −100µA, VDS = 0
VDS = 10V, ID = 1µA
VDS = 10V, ID = 1µA, f = 1kHz

VDS = 10V, VGS = 0, f = 1MHz

min

1.4

−40

2.5

typ

max

4.7

−1

Unit

mA

nA

V

−3.5

V

mS
5
1
1

pF
pF
pF

1

Silicon Junction FETs (Small Signal)

2SK2751

PD  Ta ID  V

250

)
mW

(

200

D

150

100

50

Allowable power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)
mS

(
|

fs

| Yfs |  V

12

10

8

6

GS

VDS=10V

VDS=10V

ID  V

Ta=–25˚C

GS

25˚C
75˚C

)

DS

12

10

Ta=25˚C

)
mA

(

8

D

6

4

Drain current I

2

0

012108264

)

Drain to source voltage VDS (V

| Yfs |  I

12

)
mS

(

10

|

fs

8

6

D

VGS=0.6V

0.4V

0.2V

0V

– 0.2V

VDS=25V
T

=25˚C

C

)

6

5

)

mA

(

4

D

3

2

Drain current I

1

0

–1 10.6– 0.6 0.2– 0.2

Gate to source voltage VGS (V

4

2

Forward transfer admittance |Y

0
–1.6 0.40–1.2 – 0.4– 0.8

Gate to source voltage VGS (V

4

2

Forward transfer admittance |Y

0

0654132

)

Drain current ID (mA

)

2