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Silicon Junction FETs (Small Signal)
2SK2751
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For pyroelectric sensor
■ Features
●Low noise-figure (NF)
●High gate to drain voltage V
GDO
●Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
■ Absolute Maximum Ratings (Ta = 25°C)
Parameter
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
GDS
I
D
I
G
P
D
T
ch
T
stg
Ratings
−40
10
2
200
150
−55 to +150
Unit
V
mA
mA
mW
°C
°C
+0.2
2.8
–0.3
+0.25
1.5
0.65±0.15 0.65±0.15
1
0.950.95
+0.2
–0.05
2.9
1.9±0.2
2
+0.2
–0.1
0.8
1.1
0.1 to 0.3
0.4±0.2
1: Source JEDEC: TO-236
2: Drain EIAJ: SC-59
3: Gate Mini Type Package (3-pin)
–0.05
unit: mm
1.45
3
+0.1
+0.1
0 to 0.1
Marking Symbol: HS
–0.05
0.4
–0.06
0.16
■ Electrical Characteristics (Ta = 25 ± 3°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Note: The test method to comply with JISC7030, Field effect transistor test method.
Symbol
I
DSS
I
GSS
V
GDS
V
GSC
| Yfs |
C
iss
C
oss
C
rss
Conditions
VDS = 10V, VGS = 0
VGS = −20V, VDS = 0
IG = −100µA, VDS = 0
VDS = 10V, ID = 1µA
VDS = 10V, ID = 1µA, f = 1kHz
VDS = 10V, VGS = 0, f = 1MHz
min
1.4
−40
2.5
typ
max
4.7
−1
Unit
mA
nA
V
−3.5
V
mS
5
1
1
pF
pF
pF
1
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Silicon Junction FETs (Small Signal)
2SK2751
PD Ta ID V
250
)
mW
(
200
D
150
100
50
Allowable power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
)
mS
(
|
fs
| Yfs | V
12
10
8
6
GS
VDS=10V
VDS=10V
ID V
Ta=–25˚C
GS
25˚C
75˚C
)
DS
12
10
Ta=25˚C
)
mA
(
8
D
6
4
Drain current I
2
0
012108264
)
Drain to source voltage VDS (V
| Yfs | I
12
)
mS
(
10
|
fs
8
6
D
VGS=0.6V
0.4V
0.2V
0V
– 0.2V
VDS=25V
T
=25˚C
C
)
6
5
)
mA
(
4
D
3
2
Drain current I
1
0
–1 10.6– 0.6 0.2– 0.2
Gate to source voltage VGS (V
4
2
Forward transfer admittance |Y
0
–1.6 0.40–1.2 – 0.4– 0.8
Gate to source voltage VGS (V
4
2
Forward transfer admittance |Y
0
0654132
)
Drain current ID (mA
)
2