Panasonic 2SK2593 Datasheet
Silicon Junction FETs (Small Signal)
2SK2593
Silicon N-Channel Junction FET
For low-frequency amplification
For switching
■ Features
●Low noies, high gain
●High gate to drain voltage V
GDO
●Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
■ Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Drain voltage
Gate to Source voltage
Drain current
Gate current
Allowable power dissipation
Junction temperature
Storage temperature
Symbol
V
DSX
V
GDO
V
GSO
I
D
I
G
P
D
T
j
T
stg
Ratings
55
−55
−55
±30
10
125
125
−55 to +125
Unit
V
V
V
mA
mA
mW
°C
°C
1.6±0.15
0.8±0.1 0.40.4
1
0.5
1.6±0.1
1.0±0.1
0.5
2
0.3
0.75±0.15
0.45±0.1
1: Source
2: Drain EIAJ: SC-75
3: Gate SS-Mini Type Package (3-pin)
0.2±0.1
0 to 0.1
unit: mm
+0.1
3
+0.1
Marking Symbol (Example): 2B
–0.05
0.2
–0.05
0.15
■ Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Forward transfer admittance
Input capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Noise figure
*
I
rank classification
DSS
Runk
I
(mA)
DSS
Marking Symbol
P
1 to 3
2BP
Symbol
I
DSS
I
GSS
V
GDS
V
GSC
| Yfs |
C
iss
C
rss
NF
Q
2 to 6.5
2BQ
*
VDS = 10V, VGS = 0
VGS = −30V, VDS = 0
IG = −100µA, VDS = 0
VDS = 10V, ID = 10µA
VDS = 10V, ID = 5mA, f = 1kHz
VDS = 10V, VGS = 0, f = 1MHz
VDS = 10V, VGS = 0, Rg = 100kΩ
f = 100Hz
5 to 12
2BR
R
Conditions
S
10 to 20
2BS
min
1
55
2.5
typ
80
7.5
6.5
1.9
2.5
max
20
10
−5
Unit
mA
nA
V
V
mS
pF
pF
dB
1
Silicon Junction FETs (Small Signal)
2SK2593
PD Ta ID V
150
)
mW
(
125
D
100
75
50
25
Allowable power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
ID V
GS
16
14
)
12
mA
(
10
D
8
Ta=–25˚C
6
Drain current I
4
2
0
0 –1.2–1.0– 0.8– 0.2 – 0.6– 0.4
Gate to source voltage VGS (V
25˚C
75˚C
VDS=10V
Ta=25˚C
DS
5
4
)
mA
(
3
D
2
Drain current I
1
0
0654132
)
Drain to source voltage VDS (V
| Yfs | V
12
)
mS
(
10
|
fs
8
6
4
2
Forward transfer admittance |Y
0
–2.0 0– 0.4–1.6 – 0.8–1.2
)
Gate to source voltage VGS (V
Ta=25˚C
V
=0
GS
– 0.2V
– 0.4V
– 0.6V
– 0.8V
– 1.0V
)
GS
VDS=10V
Ta=25˚C
)
10
8
)
mA
(
6
D
4
Drain current I
2
0
012108264
Drain to source voltage VDS (V
12
)
mS
(
10
|
fs
8
6
4
2
Forward transfer admittance |Y
0
0108264
ID V
DS
VGS=0V
| Yfs | I
I
DSS
D
VDS=10V
Ta=25˚C
=7.5mA
Drain current ID (mA
Ta=25˚C
– 0.2V
– 0.4V
– 0.6V
– 0.8V
– 1.0V
– 1.2V
)
)
C
V
iss
16
)
pF
(
14
iss
C
)
12
10
8
Common source
(
6
4
2
Input capacitance
0
012108264
Drain to source voltage VDS (V
2
DS
VGS=0
Ta=25˚C
)
C
V
oss
)
8
pF
(
7
oss
C
)
6
5
4
Common source
(
3
2
1
Output capacitance
0
012108264
Drain to source voltage VDS (V
DS
VGS=0
Ta=25˚C
)
8
pF
(
rss
7
C
)
6
5
Common source
(
4
3
2
1
Reverse transfer capacitance
0
012108264
)
Drain to source voltage VDS (V
C
V
rss
DS
VGS=0
Ta=25˚C
)
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