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Power F-MOS FETs
2SK2573 (Tentative)
Silicon N-Channel Power F-MOS FET
■ Features
●Avalanche energy capacity guaranteed
●High-speed switching
●Low ON-resistance
●No secondary breakdown
■ Applications
●Contactless relay
●Diving circuit for a solenoid
●Driving circuit for a motor
●Control equipment
●Switching power supply
■ Absolute Maximum Ratings (T
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC
Pulse
Avalanche energy capacity
Allowable power
dissipation
TC = 25°C
Ta = 25°C
Channel temperature
Storage temperature
*
L = 0.1mH, IL = 20A, 1 pulse
Symbol
V
V
I
D
I
DP
EAS
P
D
T
ch
T
stg
DSS
GSS
*
= 25°C)
C
Ratings
−55 to +150
500
±30
±20
±40
20
100
3
150
Unit
V
V
A
A
mJ
W
°C
°C
4.5
4.0
2.0±0.2
1.1±0.1
5.45±0.3
0.7±0.1
3.3±0.3
15.5±0.5
5˚
123
φ3.2±0.1
2.0 2.0 1.2 10.0
5.45±0.3
2.0
26.5±0.5
18.6±0.5
5.5±0.3
unit: mm
3.0±0.3
5˚ 5˚
23.4
5˚
5˚
5˚
0.7±0.1
1: Gate
2: Drain
3: Source
TOP-3E Package
22.0±0.5
■ Electrical Characteristics (T
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
Thermal resistance between channel and atmosphere
C
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Yfs |
V
DSF
C
iss
C
oss
C
rss
t
on
t
f
t
d(off)
R
th(ch-c)
R
th(ch-a)
= 25°C)
Conditions
VDS = 400V, VGS = 0
VGS = ±20V, VDS = 0
ID = 1mA, VGS = 0
VDS = 25V, ID = 1mA
VGS = 10V, ID = 10A
VDS = 25V, ID = 10A
IDR = 20A, VGS = 0
VDS = 20V, VGS = 0, f = 1MHz
VDD = 150V, ID = 10A
VGS = 10V, RL = 15Ω
min
500
1
7.2
typ
0.32
12
3000
430
175
150
140
480
max
100
±1
5
0.4
−2.8
1.25
41.67
Unit
µA
µA
V
V
Ω
S
V
pF
pF
pF
ns
ns
ns
°C/W
°C/W
1
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Power F-MOS FETs 2SK2573
Area of safe operation (ASO) PD Ta IAS L-load
2
10
I
DP
I
D
)
A
(
10
D
1
Non repetitive pulse
T
=25˚C
C
DC
100ms
10ms
Drain current I
–1
10
–1
10
11010210
Drain to source voltage VDS (V
I
V
D
GS
30
VDS=25V
T
=25˚C
C
25
)
A
(
20
D
15
10
Drain current I
5
t=1ms
160
)
140
W
(
D
120
100
80
60
40
20
Allowable power dissipation P
PD=3.0W
3
)
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
1.2
)
Ω
(
1.0
DS(on)
0.8
0.6
0.4
0.2
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(1)
(2)
(3)
R
I
DS(on)
D
TC=25˚C
=10V
V
GS
15V
)
2
10
)
A
(
10
1
Avalanche current IAS
–1
10
–2
10
–1
10
L-load (mH
C
, C
iss
oss
10000
)
,
)
pF
(
rss
3000
,C
Common source
(
oss
,C
1000
iss
C
)
300
, Output capacitance
)
Common source
(
100
Common source
(
30
TC=25˚C
E=20mJ
110
)
, C
V
rss
C
iss
DS
f=1MHz
=25˚C
T
C
C
oss
C
rss
0
0108264
Gate to source voltage VGS (V
| Yfs | I
16
)
S
(
14
|
fs
12
10
8
6
4
2
Forward transfer admittance |Y
0
0504010 3020
Drain current ID (A
2
D
VDS=25V
T
=25˚C
C
Drain to source ON-resistance R
0
0504010 3020
)
)
µs
(
d(off)
,t
f
,t
on
Switching time t
)
800
700
600
500
400
300
200
100
0
0252051510
Drain current ID (A
ton, tf, t
d(off)
Drain current ID (A
I
t
D
VCC=150
V
GS
=25˚C
T
C
d(off)
t
on
t
f
)
=10V
)
Input capacitance
Reverse transfer capacitance
10
0 20050 150100
Drain to source voltage VDS (V
)