Panasonic 2SK2538 Datasheet

Power F-MOS FETs 2SK2538

2SK2538

Silicon N-Channel Power F-MOS

■ Features

●

Avalanche energy capability guaranteed

●

High-speed switching

●

No secondary breakdown

■ Applications

●

High-speed switching (switching mode regulator)

●

For high-frequency power amplification

■ Absolute Maximum Ratings (Tc = 25˚C)

Parameter
Drain-Source breakdown voltage
Gate-Source voltage

Drain current

DC
Pulse

Avalanche energy capability

= 25˚C

T

Allowable power
dissipation

C

Ta= 25˚C
Channel temperature
Storage temperature

* L= 5mH, IL= 2A, VDD= 30V, 1 pulse

Symbol

V

DSS

V

GSS

I

D

I

DP

*

EAS

P

D

T

ch

T

stg

Rating

250

±30

±2
±4
10
30

2

150

–55 to +150

Unit

V
V
A
A

mJ

W

˚C
˚C

16.7±0.3

14.0±0.5

0.7±0.1

7.5±0.2

4.0

Solder Dip

10.0±0.2

5.5±0.2

5.08±0.5
213

2.7±0.2

4.2±0.2

ø3.1±0.1

1.3±0.2

1.4±0.1

+0.2

0.5

0.8±0.1

2.54±0.25

TO-220 Full Pack Package (a)

-

Unit : mm

4.2±0.2

0.1

1 : Gate
2 : Drain
3 : Source

■ Electrical Characteristics (Tc = 25˚C)

Parameter
Drain-Source cut-off current
Gate-Source leakage current
Drain-Source breakdown voltage
Gate threshold voltage
Drain-Source ON-resistance
Forward transadmittance
Diode forward voltage
Input capacitance
Output capacitance
Feedback capacitance
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Channel-Case heat resistance
Channel-Atmosphere heat resistance

Symbol
I

DSS

I

GSS

V

DSS

V

th

R

DS(on)

| Yfs |
V

DSF

C

iss

C

oss

C

rss

t

d(on)

t

r

t

f

t

d(off)

R

th(ch-c)

R

th(ch-a)

V
V
I

D

V
V
V
I

DR

V

V
V

Condition

= 200V, VGS= 0

DS

=±30V , VDS= 0

GS

=1mA, VGS= 0

=10V, ID=1mA

DS

=10V, ID=1A

GS

= 25V, ID=1A

DS

= 2A, VGS= 0

=10V , VGS= 0, f=1MHz

DS

= 200V, ID= 2A

DD

=10V, RL=100Ω

GS

Min

250

1

0.5

Typ

1.2
1

220

60
20
10
20
45
90

Max

100

±1

5
2

–1.6

4.17

62.5

Unit

µ A
µ A

V
V

Ω

S

V
pF
pF
pF

ns
ns
ns

ns
˚C/W
˚C/W

Power F-MOS FETs 2SK2538

Area of safe operation (ASO)

100

30

10

)

I

DP

A

(

3

I

D

D

1

0.3

Drain current I

0.1

0.03

0.01
1

Drain-Source voltage V

5

VGS=10.0V

4

)
A

(

D

3

2

Drain current I

1

Non repetitive pulse
T

=25˚C

C

t=1ms

t=10ms
t=100ms

DC

10 100 10003 30 300

DS

ID – V

DS

9.0V

8.0V

7.0V

6.5V
30W

(V)

TC=25˚C

6.0V

5.5V

5.0V

PD – T a

40

(1) TC=Ta

)
W

(

(1)

30

D

20

10

Allowable power dissipation P

(2)

0

0

Ambient temperature Ta (˚C

(2) Without heat sink
(P

40 80 120 16020 60 100 140

ID – V

5

4

)
A

(

D

3

2

Drain current I

1

=2.0W)

D

GS

)

VDS=10V
T

=25˚C

C

EAS – T

12

10

8

6

4

2

Avalanche energy capability EAS (mJ)

0

25 50

5

)

Ω

(

4

DS(on)

3

2

1

Drain-Source ON-resistance R

75 100 125 150 175

Junction temperature T

R

DS(on)

TC=100˚C

25˚C

0˚C

– I

j

VDD=30V
I

D

j

D

V

=2A

(˚C)

GS

=10V

0

048121620

D

DS

D

(V

VDS=25V
T

(A)

)

=25˚C

C

Drain voltage V

| Yfs | – I

3

)
S

(
|

fs

2

1

Forward transadmittance | Y

0

012345

Drain current I

0

0246810

Gate-Source voltage V

C

iss, Coss, Crss

)

1000

F
(p

rss

, C

300

oss

, C

iss

C

100

30

Feedback capacitance

10

3

Input capacitance, Output capacitance,

1

0 50 100 150 200 250

Drain-Source voltage V

– V

GS

f=1MHz
T

DS

(V)

DS

=25˚C

C

(V)

0

012345

Drain current I

t

d(on), tr, tf, td(off)

120

C

iss

C

oss

C

rss

100

)
ns

80

(

60

40

Switching time t

20

0

012345

Drain current ID (A

D

t

t

t

t

(on)

d

(A)

–

I

D

VDD=200V
V

=10V

GS

T

=25˚C

C

(off)

d

f

r

)